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Authors: CAFFIN D BESOMBES C BRESSE JF LEGAY P LEROUX G PATRIARCHE G LAUNAY P
Citation: D. Caffin et al., BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 854-861

Authors: CAFFIN D DUCHENOIS AM HELIOT F BESOMBES C BENCHIMOL JL LAUNAY P
Citation: D. Caffin et al., BASE-COLLECTOR LEAKAGE CURRENTS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 930-936
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