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Results:
1-13
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Results: 13
Authors:
BHAVE TM
BHORASKAR SV
Citation: Tm. Bhave et Sv. Bhoraskar, SURFACE WORK FUNCTION STUDIES IN POROUS SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2073-2078
Authors:
HULLAVARAD SS
RAILKAR TA
BHORASKAR SV
MADUKUMAR P
GOKAMA AS
BHORASKAR VN
BADRINARAYANAN S
PAWASKAR NR
Citation: Ss. Hullavarad et al., SURFACE MODIFICATION OF N-GAAS BY 50 MEV SILICON IONS, Journal of applied physics, 83(4), 1998, pp. 1962-1966
Authors:
DOKHALE PA
SALI ND
KUMAR PM
BHORASKAR SV
ROHATGI VK
BHORASKAR VN
DATE SK
BADRINARAYANAN S
Citation: Pa. Dokhale et al., ENHANCED SURFACE-ACTIVITY IN NANOCRYSTALLINE ALUMINA AS STUDIED BY NEUTRON-ACTIVATION ANALYSIS, X-RAY PHOTOELECTRON AND INFRARED-SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 49(1), 1997, pp. 18-26
Authors:
BHAVE TM
BHORASKAR SV
SINGH P
BHORASKAR VN
Citation: Tm. Bhave et al., RADIATION-INDUCED RECRYSTALLIZATION AND ENHANCEMENT IN PHOTOLUMINESCENCE FROM POROUS SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(3), 1997, pp. 409-417
Authors:
HULLAVARAD SS
BHORASKAR SV
BOSE DN
Citation: Ss. Hullavarad et al., DETECTION OF SURFACE-STATES IN GAAS AND INP BY THERMALLY STIMULATED EXOELECTRON EMISSION-SPECTROSCOPY, Journal of applied physics, 82(11), 1997, pp. 5597-5599
Authors:
BHAVE TM
BHORASKAR SV
KULKARNI S
BHORASKAR VN
Citation: Tm. Bhave et al., IMPROVEMENT IN THE PHOTOLUMINESCENCE EFFICIENCY OF POROUS SILICON USING HIGH-ENERGY SILICON ION IRRADIATION, Journal of physics. D, Applied physics, 29(2), 1996, pp. 462-465
Authors:
KULKARNI AA
KARVE P
BHAVE T
BHORASKAR SV
OGALE SB
KANETKAR SM
AYYUB P
PURANDARE SC
Citation: Aa. Kulkarni et al., INTEGRATION OF POROUS SILICON WITH CVD DIAMOND, Journal of physics. D, Applied physics, 28(7), 1995, pp. 1400-1403
Authors:
RAILKAR TA
BHORASKAR SV
Citation: Ta. Railkar et Sv. Bhoraskar, DETECTION OF METAL-INDUCED GAP STATES IN SILICON, Applied physics letters, 66(8), 1995, pp. 974-975
Authors:
KUMAR PM
BORSE P
ROHATGI VK
BHORASKAR SV
SINGH P
SASTRY M
Citation: Pm. Kumar et al., SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF NANOCRYSTALLINE ALUMINUM-OXIDE, Materials chemistry and physics, 36(3-4), 1994, pp. 354-358
Authors:
BHORASKAR SV
BHAVE T
RAILKAR TA
Citation: Sv. Bhoraskar et al., CRYSTALLITE-SIZE-DEPENDENT CHARACTERISTICS OF POROUS SILICON, Bulletin of Materials Science, 17(5), 1994, pp. 523-531
Authors:
BHUIYAN AH
BHORASKAR SV
BADRINARAYANAN S
Citation: Ah. Bhuiyan et al., X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES ON PYROLYSIS OF THIN-FILMS OF PLASMA-POLYMERIZED ACRYLONITRILE, Thin solid films, 240(1-2), 1994, pp. 66-69
Authors:
BHUIYAN AH
BHORASKAR SV
Citation: Ah. Bhuiyan et Sv. Bhoraskar, EVIDENCE OF THE FORMATION OF A CHARGE-TRANSFER COMPLEX BETWEEN IODINEAND PLASMA-POLYMERIZED ACRYLONITRILE, Thin solid films, 235(1-2), 1993, pp. 43-46
Authors:
RAILKAR TA
BHORASKAR SV
DHOLE SD
BHORASKAR VN
Citation: Ta. Railkar et al., DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 74(7), 1993, pp. 4343-4346
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