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Results:
1-19
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Results: 19
Authors:
CHAVAN ST
BHORASKAR VN
Citation: St. Chavan et Vn. Bhoraskar, STUDIES ON DAMAGE-INDUCED BY 45 AND 80 MEV BORON IONS IN CRYSTALLINE SILICON, Radiation physics and chemistry, 51(4-6), 1998, pp. 515-516
Authors:
SARKAR R
BHORASKAR VN
Citation: R. Sarkar et Vn. Bhoraskar, SPIN DISTRIBUTION FACTORS FOR FORMATION OF METASTABLE STATES OF Y-90 AND Y-91 THROUGH (N,P) REACTIONS OVER NEUTRON ENERGIES 5-15 MEV, Nuclear physics. A, 633(4), 1998, pp. 640-650
Authors:
SATHYAVATHI P
BHAVE PS
BHORASKAR VN
Citation: P. Sathyavathi et al., IRRADIATION EFFECTS OF 35 MEV LITHIUM AND 70 MEV OXYGEN IONS ON THE HOLE LIFETIME AND THE FORWARD CURRENT OF SILICON DIODES, Solid state communications, 106(11), 1998, pp. 755-758
Authors:
HULLAVARAD SS
RAILKAR TA
BHORASKAR SV
MADUKUMAR P
GOKAMA AS
BHORASKAR VN
BADRINARAYANAN S
PAWASKAR NR
Citation: Ss. Hullavarad et al., SURFACE MODIFICATION OF N-GAAS BY 50 MEV SILICON IONS, Journal of applied physics, 83(4), 1998, pp. 1962-1966
Authors:
DOKHALE PA
SALI ND
KUMAR PM
BHORASKAR SV
ROHATGI VK
BHORASKAR VN
DATE SK
BADRINARAYANAN S
Citation: Pa. Dokhale et al., ENHANCED SURFACE-ACTIVITY IN NANOCRYSTALLINE ALUMINA AS STUDIED BY NEUTRON-ACTIVATION ANALYSIS, X-RAY PHOTOELECTRON AND INFRARED-SPECTROSCOPY, Materials science & engineering. B, Solid-state materials for advanced technology, 49(1), 1997, pp. 18-26
Authors:
BHORASKAR VN
Citation: Vn. Bhoraskar, IRRADIATION EFFECTS IN SEMICONDUCTOR, Bulletin of Materials Science, 20(4), 1997, pp. 385-389
Authors:
BHAVE TM
BHORASKAR SV
SINGH P
BHORASKAR VN
Citation: Tm. Bhave et al., RADIATION-INDUCED RECRYSTALLIZATION AND ENHANCEMENT IN PHOTOLUMINESCENCE FROM POROUS SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(3), 1997, pp. 409-417
Authors:
BHAVE PS
BHORASKAR VN
Citation: Ps. Bhave et Vn. Bhoraskar, IRRADIATION EFFECTS OF HIGH-ENERGY HEAVY-IONS ON THE SWITCHING CHARACTERISTICS OF P-N-JUNCTION DIODES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 383-387
Authors:
CHAVAN ST
DHOLE SD
BHORASKAR VN
KANJILAL D
MEHTA GK
Citation: St. Chavan et al., DEPTH DISTRIBUTION OF SILICON-ION INDUCED DEFECTS IN CRYSTALLINE SILICON, Journal of applied physics, 82(10), 1997, pp. 4805-4809
Authors:
DOKHALE PA
BHORASKAR VN
Citation: Pa. Dokhale et Vn. Bhoraskar, STANDARDIZATION OF PROCESS PARAMETERS FOR A CHEMICAL-REACTION USING NEUTRON-ACTIVATION ANALYSIS TECHNIQUE, Measurement science & technology, 7(8), 1996, pp. 1174-1178
Authors:
PANDA SP
KULKARNI SG
SAHU SK
BHORASKAR VN
DOKHALE PA
Citation: Sp. Panda et al., FAST-NEUTRON ACTIVATION-ANALYSIS OF GLYCIDYL AZIDE POLYMERS, Bulletin of Materials Science, 19(6), 1996, pp. 1125-1132
Authors:
BHAVE TM
BHORASKAR SV
KULKARNI S
BHORASKAR VN
Citation: Tm. Bhave et al., IMPROVEMENT IN THE PHOTOLUMINESCENCE EFFICIENCY OF POROUS SILICON USING HIGH-ENERGY SILICON ION IRRADIATION, Journal of physics. D, Applied physics, 29(2), 1996, pp. 462-465
Authors:
BHAVE PS
CHAVAN ST
BHORASKAR VN
Citation: Ps. Bhave et al., IMPROVEMENT IN SWITCHING CHARACTERISTICS OF SILICON DIODES THROUGH A SELECTIVE ZONE OF DEFECTS PRODUCED BY 6 MEV ELECTRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(3), 1995, pp. 334-338
Authors:
BHAVE PS
BHORASKAR VN
Citation: Ps. Bhave et Vn. Bhoraskar, THE RESPONSE OF N-CHANNEL EPROMS TO RADIATION AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 103(2), 1995, pp. 223-228
Authors:
CHAVAN ST
BHAVE PS
BHORASKAR VN
KANJILAL D
Citation: St. Chavan et al., DAMAGE-INDUCED BY 90 MEV SILICON IONS IN CRYSTALLINE SILICON, Journal of applied physics, 78(4), 1995, pp. 2328-2332
Authors:
PANSARE GR
NAGESH N
BHORASKAR VN
Citation: Gr. Pansare et al., A STUDY ON GRAFTING OF ACRYLONITRILE ONTO HIGH-DENSITY POLYETHYLENE BY THE NEUTRON-ACTIVATION ANALYSIS TECHNIQUE, Journal of physics. D, Applied physics, 27(4), 1994, pp. 871-874
Authors:
DHOLE SD
CHAUDHARI DT
BHORASKAR VN
Citation: Sd. Dhole et al., MEASUREMENT OF BACKSCATTERING PARAMETERS WITH A PULSED ELECTRON-BEAM, Measurement science & technology, 4(9), 1993, pp. 1006-1009
Authors:
RAILKAR TA
BHORASKAR SV
DHOLE SD
BHORASKAR VN
Citation: Ta. Railkar et al., DEFECT STUDIES IN OXYGEN-ION-IRRADIATED SILICON-BASED METAL-INSULATOR-SEMICONDUCTOR STRUCTURES, Journal of applied physics, 74(7), 1993, pp. 4343-4346
Authors:
KOTHARI SK
BHATNAGAR SP
VERMA SD
BHORASKAR VN
Citation: Sk. Kothari et al., A CHARGED-PARTICLE TELESCOPE TO STUDY RELATIVISTIC ELECTRONS, SUB-RELATIVISTIC PROTONS AND MUONS, Astrophysics and space science, 202(1), 1993, pp. 21-32
Risultati:
1-19
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