Authors: ZAIKINA RF ZIMIN SP SARSEMBINOV SS BOCHKAREVA LV

Citation: Rf. Zaikina et al., ELECTRICAL-PROPERTIES OF IRRADIATED LEAD SULFIDE FILM, Semiconductors, 28(11), 1994, pp. 1056-1058

Authors: KHLYAP GM ANDRUKHIV MG BLASHKIV VS BOCHKAREVA LV NIMETSKII VP

Citation: Gm. Khlyap et al., PHOTOELECTRIC AND EMISSIVE PROPERTIES OF HETEROSTRUCTURES BASED ON LEAD SULFIDE AND II-VI COMPOUNDS, Inorganic materials, 30(5), 1994, pp. 574-576

Authors: KHLYAP GM BOCHKAREVA LV SHKUMBATYUK PS

Citation: Gm. Khlyap et al., AGING OF HETEROSTRUCTURES BASED ON LEAD SULFIDE AND II-VI COMPOUNDS, Inorganic materials, 30(5), 1994, pp. 658-659

Authors: KUZNETSOV VS BOCHKAREVA LV

Citation: Vs. Kuznetsov et Lv. Bochkareva, MECHANISM FOR THE FLOW OF THE CURRENT IN THIN-FILM SINGLE-CRYSTAL P-N-JUNCTIONS BASED ON PBS, Semiconductors, 27(5), 1993, pp. 431-433

Authors: ZIMIN SP KOREGINA EL BOCHKAREVA LV

Citation: Sp. Zimin et al., PROPERTIES OF COMPENSATED LEAD CADMIUM-SULFIDE FILMS, Semiconductors, 27(1), 1993, pp. 101-102

Authors: KHLYAP GM ANDRUKHIV MG BOCHKAREVA LV VIRT IS SHKUMBATYUK PS

Citation: Gm. Khlyap et al., PHYSICAL-PROPERTIES OF HG1-XCDXTE PBS HETEROJUNCTIONS/, Inorganic materials, 29(5), 1993, pp. 828-830