Authors: BONDARENKO VP BOGATIREV YV COLINGE JP DOLGYI LN DOROFEEV AM YAKOVTSEVA VA

Citation: Vp. Bondarenko et al., TOTAL GAMMA-DOSE CHARACTERISTICS OF CMOS DEVICES IN SOI STRUCTURES BASED ON OXIDIZED POROUS SILICON, IEEE transactions on nuclear science, 44(5), 1997, pp. 1719-1723