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Authors: GOUDEAU P NAUDON A VEZIN V HALIMAOUI A BOMCHIL G LAMBERT B

Citation: P. Goudeau et al., CORRELATION BETWEEN THE POROUS SILICON MORPHOLOGY AND THE PHOTOLUMINESCENCE EFFICIENCY - A SAXS STUDY, Physica status solidi. b, Basic research, 190(1), 1995, pp. 63-68

Authors: NAUDON A GOUDEAU P HALIMAOUI A LAMBERT B BOMCHIL G

Citation: A. Naudon et al., SMALL-ANGLE X-RAY-SCATTERING STUDY OF ANODICALLY OXIDIZED POROUS SILICON LAYERS, Journal of applied physics, 75(2), 1994, pp. 780-784

Authors: NAUDON A GOUDEAU P HALIMAOUI A BOMCHIL G

Citation: A. Naudon et al., SMALL-ANGLE X-RAY-SCATTERING STUDY OF THE MICROSTRUCTURE OF HIGHLY POROUS SILICON, Journal de physique. IV, 3(C8), 1993, pp. 349-352

Authors: GOUDEAU P NAUDON A HALIMAOUI A BOMCHIL G

Citation: P. Goudeau et al., SAXS STUDY OF THE INFLUENCE OF THE POROUS SILICON MORPHOLOGY ON THE PHOTOLUMINESCENCE EFFICIENCY, Journal of luminescence, 57(1-6), 1993, pp. 141-145