Authors:
BONNOT R
SYRKIN AL
LEVEQUE G
BLUET JM
CAMASSEL J
Citation: R. Bonnot et al., COMPARATIVE INVESTIGATION OF ECR-RIE PATTERNS ON SI AND C FACES OF 6H-SIC USIAG A CF4 O-2 GAS-MIXTURE/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1463-1466
Citation: Al. Syrkin et al., REACTIVE ION ETCHING OF 6H-SIC IN AN ECR PLASMA OF CF4-O-2 MIXTURES USING BOTH NI AND AL MASKS, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 374-378
Citation: R. Bonnot et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION AND ETCHING OF SILICON-NITRIDE ON GASB FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 369-373