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Results: 1-25/32
Authors:
PAL R
SINGH M
MURLIDHARAN R
AGARWAL SK
PAL D
BOSE DN
Citation: R. Pal et al., LATTICE MISMATCH AND SURFACE-MORPHOLOGY STUDIES OF INXGA1-XAS EPILAYERS GROWN ON GAAS SUBSTRATES, Bulletin of Materials Science, 21(4), 1998, pp. 313-316
Authors:
PAL R
DHAUL A
AGARWAL SK
PAL D
BOSE DN
Citation: R. Pal et al., EFFECTIVE TECHNIQUES FOR REDUCTION OF SILICON IMPURITY IN CHLORIDE VAPOR-PHASE EPITAXIAL-GROWTH OF GAINAS, Materials research bulletin, 33(2), 1998, pp. 261-267
Authors:
BHUNIA S
BOSE DN
Citation: S. Bhunia et Dn. Bose, MICROWAVE SYNTHESIS, SINGLE-CRYSTAL GROWTH AND CHARACTERIZATION OF ZNTE, Journal of crystal growth, 186(4), 1998, pp. 535-542
Authors:
BOSE DN
PAL S
Citation: Dn. Bose et S. Pal, SCHOTTKY BARRIERS ON ANISOTROPIC SEMICONDUCTOR GATE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(2), 1997, pp. 311-318
Authors:
CHANDA B
BOSE DN
Citation: B. Chanda et Dn. Bose, THERMAL QUENCHING OF LUMINESCENCE IN ERBIUM-DOPED SEMICONDUCTORS, Pramana, 48(6), 1997, pp. 1145-1149
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, STUDY OF PHOTOLUMINESCENCE AND COMPUTATION OF CONFIGURATION COORDINATE DIAGRAM OF CU RELATED DEEP LEVELS IN INP, Bulletin of Materials Science, 20(4), 1997, pp. 401-407
Authors:
PAL R
AGARWAL SK
PAL D
BOSE DN
Citation: R. Pal et al., DOUBLE-CRYSTAL X-RAY-DIFFRACTION STUDIES ON CHLORIDE-VPE GROWN GAXIN1-XAS LAYERS WITH DIFFERENT GA-TO-IN RATIO, Materials research bulletin, 32(5), 1997, pp. 589-594
Authors:
HULLAVARAD SS
BHORASKAR SV
BOSE DN
Citation: Ss. Hullavarad et al., DETECTION OF SURFACE-STATES IN GAAS AND INP BY THERMALLY STIMULATED EXOELECTRON EMISSION-SPECTROSCOPY, Journal of applied physics, 82(11), 1997, pp. 5597-5599
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, PREPARATION OF GAN AND INN FOR BLUE-LIGHT-EMITTING SOURCES, Current Science, 72(9), 1997, pp. 651-653
Authors:
JANA T
BOSE DN
SUBRAHMANYAM PVS
Citation: T. Jana et al., FABRICATION OF P+ IMPLANTED SHALLOW JUNCTIONS WITH TISI2 IN SI MOS STRUCTURE, INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 3(4), 1996, pp. 148-151
Authors:
ALI ST
BHATTACHARYA P
BOSE DN
Citation: St. Ali et al., PULSED-LASER DEPOSITION OF ZNSE THIN-FILM ON SI FOR HETEROJUNCTION STUDIES, INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 3(4), 1996, pp. 152-157
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE STUDIES IN COPPER DIFFUSED INP, Journal of electronic materials, 25(4), 1996, pp. 677-684
Authors:
ALI ST
GHOSH S
BOSE DN
Citation: St. Ali et al., RUTHENIUM AND SULFIDE PASSIVATION OF GAAS, Applied surface science, 93(1), 1996, pp. 37-43
Authors:
BHUMIA S
BHATTACHARYA P
BOSE DN
Citation: S. Bhumia et al., PULSED-LASER DEPOSITION OF ZNTE THIN-FILMS, Materials letters, 27(6), 1996, pp. 307-311
Authors:
PAL S
BOSE DN
Citation: S. Pal et Dn. Bose, GROWTH, CHARACTERIZATION AND ELECTRICAL ANISOTROPY IN LAYERED CHALCOGENIDES GATE AND INTE, Solid state communications, 97(8), 1996, pp. 725-729
Authors:
RAO BVRM
BASU PK
BISWAS JC
LAHIRI SK
GHOSH S
BOSE DN
Citation: Bvrm. Rao et al., LARGE ENHANCEMENT OF PHOTOLUMINESCENCE FROM POROUS SILICON FILMS BY POST-ANODIZATION TREATMENT IN BOILING HYDROGEN-PEROXIDE, Solid state communications, 97(5), 1996, pp. 417-418
LINE-SHAPE, LINE-WIDTH, AND CONFIGURATION COORDINATE DIAGRAM OF THE CU BAND (1.21 EV) IN INP - REPLY
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, LINE-SHAPE, LINE-WIDTH, AND CONFIGURATION COORDINATE DIAGRAM OF THE CU BAND (1.21 EV) IN INP - REPLY, Journal of applied physics, 80(3), 1996, pp. 1940-1940
Authors:
GHOSH S
BHATTACHARYA P
BOSE DN
Citation: S. Ghosh et al., STRONG PHOTOLUMINESCENCE IN AMMONIA PLASMA-TREATED AMORPHOUS-SIC THIN-FILMS DEPOSITED BY LASER-ABLATION, Applied physics letters, 68(21), 1996, pp. 2979-2981
Authors:
KUMAR A
PAL D
BOSE DN
Citation: A. Kumar et al., LIQUID-PHASE EPITAXY GROWTH OF INGAAS WITH RARE-EARTH GETTERING - CHARACTERIZATION AND DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES, Journal of electronic materials, 24(7), 1995, pp. 833-840
Authors:
BOSE DN
Citation: Dn. Bose, CHATTERJEE,SHYAMADAS - OBITUARY, Physics today, 48(12), 1995, pp. 88-89
Authors:
ALI ST
KUMAR A
BOSE DN
Citation: St. Ali et al., SCHOTTKY-BARRIER HEIGHT ENHANCEMENT ON N-IN0.53GA0.47AS BY (NH4)(2)S-X SURFACE-TREATMENT, Journal of Materials Science, 30(19), 1995, pp. 5031-5035
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, LINE-SHAPE, LINEWIDTH AND CONFIGURATION COORDINATE DIAGRAM OF THE CU BAND (1.21 EV) IN INP, Journal of applied physics, 78(8), 1995, pp. 5206-5208
Authors:
PAL D
BOSE DN
Citation: D. Pal et Dn. Bose, DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDY IN GETTERED LIQUID-PHASE EPITAXY-GROWN IN0.53GA0.47AS, Journal of applied physics, 77(1), 1995, pp. 210-212
Authors:
BOSE DN
Citation: Dn. Bose, A DOYEN OF INDIAN PHYSICISTS - AN OBITUARY OF CHATTERJEE,S.D, Current Science, 69(5), 1995, pp. 474-475
Authors:
BOSE DN
Citation: Dn. Bose, SAHA AND RAMAN, Current Science, 68(11), 1995, pp. 1081-1081