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Results:
1-9
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Results: 9
Authors:
KONOVALOV I
STRIKHA V
BREITENSTEIN O
Citation: I. Konovalov et al., ACTIVATION-ENERGY OF LOCAL CURRENTS IN SOLAR-CELLS MEASURED BY THERMAL METHODS, Progress in photovoltaics, 6(3), 1998, pp. 151-161
Authors:
BREITENSTEIN O
LANGENKAMP M
Citation: O. Breitenstein et M. Langenkamp, LOCK-IN CONTACT THERMOGRAPHY INVESTIGATION OF LATERAL ELECTRONIC INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES, Sensors and actuators. A, Physical, 71(1-2), 1998, pp. 46-50
Authors:
SCHULTZ M
EGGER U
SCHOLZ R
BREITENSTEIN O
GOSELE U
TAN TY
Citation: M. Schultz et al., EXPERIMENTAL AND COMPUTER-SIMULATION STUDIES OF DIFFUSION MECHANISMS ON THE ARSENIC SUBLATTICE OF GALLIUM-ARSENIDE, Journal of applied physics, 83(10), 1998, pp. 5295-5301
Authors:
KONOVALOV IE
BREITENSTEIN O
IWIG K
Citation: Ie. Konovalov et al., LOCAL CURRENT-VOLTAGE CURVES MEASURED THERMALLY (LIVT) - A NEW TECHNIQUE OF CHARACTERIZING PV CELLS, Solar energy materials and solar cells, 48(1-4), 1997, pp. 53-60
Authors:
SCHOLZ R
AGNE M
BREITENSTEIN O
JENNICHES H
Citation: R. Scholz et al., LOW THERMAL POWER ELECTRON-BEAM ANNEALING OF SCANNING TUNNELING MICROSCOPE TIPS, Review of scientific instruments, 68(8), 1997, pp. 3262-3263
Authors:
BREITENSTEIN O
IWIG K
KONOVALOV I
Citation: O. Breitenstein et al., EVALUATION OF LOCAL ELECTRICAL PARAMETERS OF SOLAR-CELLS BY DYNAMIC (LOCK-IN) THERMOGRAPHY, Physica status solidi. a, Applied research, 160(1), 1997, pp. 271-282
Authors:
HERZOG L
EGGER U
BREITENSTEIN O
HETTWER HG
Citation: L. Herzog et al., DEFECTS IN GAAS AFTER SI INDIFFUSION AND ANNEALING - A TEM AND CL STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 30(1), 1995, pp. 43-53
Authors:
BREITENSTEIN O
Citation: O. Breitenstein, SCANNING DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATIONS ON GALLIUM-ARSENIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 28-34
Authors:
BREITENSTEIN O
EGGER U
HEYDENREICH J
Citation: O. Breitenstein et al., SCANNING-DLTS, EBIC, AND CL INVESTIGATIONS OF DIAMOND INDENTATIONS INGAAS P(+)N JUNCTIONS, Scanning, 15(6), 1993, pp. 366-371
Risultati:
1-9
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