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Results: 1-25/26
Authors:
IP BK
BREWS JR
Citation: Bk. Ip et Jr. Brews, QUANTUM EFFECTS UPON DRAIN CURRENT IN A BIASED MOSFET, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2213-2221
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, CROSSTALK ESTIMATE FOR CMOS-TERMINATED RLC INTERCONNECTIONS, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 44(1), 1997, pp. 82-85
Authors:
CHAI FK
BREWS JR
SCHRIMPF RD
BIRNIE DP
Citation: Fk. Chai et al., DOMAIN SWITCHING AND SPATIAL DEPENDENCE OF PERMITTIVITY IN FERROELECTRIC THIN-FILMS, Journal of applied physics, 82(5), 1997, pp. 2505-2516
Authors:
CHAI FK
BREWS JR
SCHRIMPF RD
BIRNIE DP
Citation: Fk. Chai et al., PROFILING OF ELECTRICAL DOPING CONCENTRATION IN FERROELECTRICS, Journal of applied physics, 82(5), 1997, pp. 2517-2527
Authors:
SIMUNIC T
ROZENBLIT JW
BREWS JR
Citation: T. Simunic et al., VLSI INTERCONNECT DESIGN AUTOMATION USING QUANTITATIVE AND SYMBOLIC TECHNIQUES, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(4), 1996, pp. 803-812
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, DESIGN TRADE-OFFS FOR THE LAST STAGE OF AN UNREGULATED, LONG-CHANNEL CMOS OFF-CHIP DRIVER WITH SIMULTANEOUS SWITCHING NOISE AND SWITCHING TIME CONSIDERATIONS, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(3), 1996, pp. 481-486
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, GUIDELINES FOR HIGH-PERFORMANCE ELECTRONIC PACKAGE INTERCONNECTIONS -APPROACH FOR STRONG-COUPLING, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(2), 1996, pp. 372-381
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, GUIDELINES FOR HIGH-PERFORMANCE ELECTRONIC PACKAGE INTERCONNECTIONS -A SIMPLE APPROACH, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 19(1), 1996, pp. 230-237
Authors:
BREWS JR
Citation: Jr. Brews, ADDITION TO THE EDITORIAL-BOARD, IEEE electron device letters, 17(7), 1996, pp. 321-321
Authors:
BREWS JR
Citation: Jr. Brews, CHANGES IN THE EDITORIAL-BOARD, IEEE electron device letters, 17(6), 1996, pp. 257-257
Authors:
ALLENSPACH M
BREWS JR
GALLOWAY KE
JOHNSON GH
SCHRIMPF RD
PEASE RL
TITUS JL
WHEATLEY CF
Citation: M. Allenspach et al., SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT, Microelectronics and reliability, 36(11-12), 1996, pp. 1871-1874
Authors:
WITCZAK SC
GALLOWAY KF
SCHRIMPF RD
TITUS JL
BREWS JR
PREVOST G
Citation: Sc. Witczak et al., THE DETERMINATION OF SI-SIO2 INTERFACE-TRAP DENSITY IN IRRADIATED 4-TERMINAL VDMOSFETS USING CHARGE-PUMPING, IEEE transactions on nuclear science, 43(6), 1996, pp. 2558-2564
Authors:
ALLENSPACH M
DACHS C
JOHNSON GH
SCHRIMPF RD
LORFEVRE E
PALAU JM
BREWS JR
GALLOWAY KF
TITUS JL
WHEATLEY CF
Citation: M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931
Authors:
TITUS JL
WHEATLEY CF
ALLENSPACH M
SCHRIMPF RD
BURTON DI
BREWS JR
GALLOWAY KF
PEASE RL
Citation: Jl. Titus et al., INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2938-2943
Authors:
BREWS JR
Citation: Jr. Brews, SENSITIVITY OF SUBTHRESHOLD CURRENT TO PROFILE VARIATIONS IN LONG-CHANNEL MOSFETS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2164-2171
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, DESIGN FOR VELOCITY SATURATED, SHORT-CHANNEL CMOS DRIVERS WITH SIMULTANEOUS SWITCHING NOISE AND SWITCHING TIME CONSIDERATIONS, IEEE journal of solid-state circuits, 31(9), 1996, pp. 1357-1360
Authors:
BREWS JR
Citation: Jr. Brews, NICOLLIAN,EDWARD,HAIG - IN-MEMORIAM, IEEE electron device letters, 16(7), 1995, pp. 297-297
Authors:
BREWS JR
Citation: Jr. Brews, ADDITION TO THE EDITORIAL-BOARD, IEEE electron device letters, 16(1), 1995, pp. 1-1
Authors:
BREWS JR
ZHOU ZY
BUXO J
Citation: Jr. Brews et al., THE EFFECT OF DOPING PROFILE VARIATIONS UPON DEEP-SUBMICROMETER MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 155-161
Authors:
CHAI FK
BREWS JR
SCHRIMPF RD
BIRNIE DP
Citation: Fk. Chai et al., LIMITATIONS OF THE UNIFORM EFFECTIVE-FIELD APPROXIMATION DUE TO DOPING OF FERROELECTRIC THIN-FILM CAPACITORS, Journal of applied physics, 78(7), 1995, pp. 4766-4775
Authors:
ALLENSPACH M
MOURET I
TITUS JL
WHEATLEY CF
PEASE RL
BREWS JR
SCHRIMPF RD
GALLOWAY KF
Citation: M. Allenspach et al., SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1922-1927
Authors:
YANG YC
BREWS JR
Citation: Yc. Yang et Jr. Brews, OVERSHOOT CONTROL FOR 2 COUPLED RLC INTERCONNECTIONS, IEEE transactions on components, packaging, and manufacturing technology. Part B, Advanced packaging, 17(3), 1994, pp. 418-425
Authors:
ALLENSPACH M
BREWS JR
MOURET I
SCHRIMPF RD
GALLOWAY KF
Citation: M. Allenspach et al., EVALUATION OF SEGR THRESHOLD IN POWER MOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2160-2166
Authors:
MOURET I
ALLENSPACH M
SCHRIMPF RD
BREWS JR
GALLOWAY KF
CALVEL P
Citation: I. Mouret et al., TEMPERATURE AND ANGULAR-DEPENDENCE OF SUBSTRATE RESPONSE IN SEGR, IEEE transactions on nuclear science, 41(6), 1994, pp. 2216-2221
Authors:
MI W
BREWS JR
Citation: W. Mi et Jr. Brews, GUIDELINES GOVERNING THE NEED FOR LOW-IMPEDANCE DRIVERS FOR MCMS, IEEE transactions on components, hybrids, and manufacturing technology, 16(1), 1993, pp. 152-156