Authors: GALYAUTDINOV MF KURBATOVA NV BUINOVA EY SHTYRKOV EI BURKARAEV AA

Citation: Mf. Galyautdinov et al., STUDY OF POROUS SILICON OBTAINED BY KRYPTON ION-IMPLANTATION AND LASER ANNEALING, Semiconductors, 31(9), 1997, pp. 970-973