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Results: 1-6 |
Results: 6

Authors: WACKER J BUTZKE S WERNER P SCHULZ M UTZ B BASTERT G
Citation: J. Wacker et al., OBSTETRICAL PROBLEMS IN THIRD-WORLD COUNT RIES, Der Gynakologe, 30(12), 1997, pp. 947-954

Authors: BASTERT G WACKER J WERNER P BUTZKE S SCHULZ M
Citation: G. Bastert et al., CRITERIA FOR GYNECOLOGICAL SERVICES, Der Gynakologe, 30(12), 1997, pp. 955-957

Authors: WERNER K STORM A BUTZKE S MAES JW VANROOY M ALKEMADE P ALGRA E SOMERS M DELANGE B VANDERDRIFT E ZIJLSTRA T RADELAAR S
Citation: K. Werner et al., GAS-SOURCE MBE GROWTH OF SI SIGE DEVICE MATERIALS/, Journal of crystal growth, 164(1-4), 1996, pp. 223-234

Authors: WERNER K BUTZKE S RADELAAR S BALK P
Citation: K. Werner et al., DETERMINATION OF THE STICKING COEFFICIENT OF DISILANE ON SI(001) USING THE 1ST REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION PERIOD, Journal of crystal growth, 136(1-4), 1994, pp. 322-327

Authors: WERNER K BUTZKE S RADELAAR S BALK P
Citation: K. Werner et al., EVIDENCE FOR NON-HYDROGEN DESORPTION LIMITED GROWTH OF SI FROM DISILANE AT VERY-LOW TEMPERATURES IN GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 338-343

Authors: BUTZKE S WERNER K TROMMEL J RADELAAR S BALK P
Citation: S. Butzke et al., STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXYWITH DISILANE USING RHEED INTENSITY OSCILLATIONS, Thin solid films, 228(1-2), 1993, pp. 27-31
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