Citation: K. Werner et al., DETERMINATION OF THE STICKING COEFFICIENT OF DISILANE ON SI(001) USING THE 1ST REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION PERIOD, Journal of crystal growth, 136(1-4), 1994, pp. 322-327
Citation: K. Werner et al., EVIDENCE FOR NON-HYDROGEN DESORPTION LIMITED GROWTH OF SI FROM DISILANE AT VERY-LOW TEMPERATURES IN GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 338-343
Authors:
BUTZKE S
WERNER K
TROMMEL J
RADELAAR S
BALK P
Citation: S. Butzke et al., STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXYWITH DISILANE USING RHEED INTENSITY OSCILLATIONS, Thin solid films, 228(1-2), 1993, pp. 27-31