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Results: 1-11 |
Results: 11
Origins of substitution
Authors: Bachmann, T
Citation: T. Bachmann, Origins of substitution, TRENDS C SC, 5(2), 2001, pp. 53-54
Change in feature space is not necessary for the flash-lag effect
Authors: Bachmann, T Poder, E
Citation: T. Bachmann et E. Poder, Change in feature space is not necessary for the flash-lag effect, VISION RES, 41(9), 2001, pp. 1103-1106
Hearing by eye: how much spatial degradation can be tolerated?
Authors: MacDonald, J Andersen, S Bachmann, T
Citation: J. Macdonald et al., Hearing by eye: how much spatial degradation can be tolerated?, PERCEPTION, 29(10), 2000, pp. 1155-1168
Radioiodine therapy in veterinary medicine: Treatment of hyperthyroidism in a cat
Authors: Reinartz, P Sabri, O Kinzel, S Zimny, M Bachmann, T Kupper, W Bull, U
Citation: P. Reinartz et al., Radioiodine therapy in veterinary medicine: Treatment of hyperthyroidism in a cat, NUKLEARMED, 38(1), 1999, pp. 31-34
Time-course of spatial-attentional focusing in the case of high processingdemand on the peripheral precue
Authors: Bachmann, T Mager, K Sarv, M Kahusk, N Turner, J
Citation: T. Bachmann et al., Time-course of spatial-attentional focusing in the case of high processingdemand on the peripheral precue, EUR J COG P, 11(2), 1999, pp. 167-198
Redistribution of implanted Er in SiO2 on Si studied by combined transmission electron microscopy and Rutherford backscattering analysis
Authors: Kollewe, D Bachmann, T Sigle, W
Citation: D. Kollewe et al., Redistribution of implanted Er in SiO2 on Si studied by combined transmission electron microscopy and Rutherford backscattering analysis, PHYS LETT A, 253(5-6), 1999, pp. 305-308
Physical sputtering of III-V-semiconductors with a focused Ga+-beam
Authors: Menzel, R Bachmann, T Wesch, W
Citation: R. Menzel et al., Physical sputtering of III-V-semiconductors with a focused Ga+-beam, NUCL INST B, 148(1-4), 1999, pp. 450-453
Ion beam processing of SiC for optical application
Authors: Wesch, W Heft, A Menzel, R Bachmann, T Peiter, G Hobert, H Hoche, T Dannberg, P Brauer, A
Citation: W. Wesch et al., Ion beam processing of SiC for optical application, NUCL INST B, 148(1-4), 1999, pp. 545-550
He+ implantation for waveguide fabrication in KTP and Rb : KTP
Authors: Opfermann, T Bachmann, T Wesch, W Rottschalk, M
Citation: T. Opfermann et al., He+ implantation for waveguide fabrication in KTP and Rb : KTP, NUCL INST B, 148(1-4), 1999, pp. 710-714
N-terminal truncated cytochrome P4502B4: Catalytic activities and reduction with alternative electron sources
Authors: Shumyantseva, VV Bulko, TV Alexandrova, SA Sokolov, NN Schmid, RD Bachmann, T Archakov, AI
Citation: Vv. Shumyantseva et al., N-terminal truncated cytochrome P4502B4: Catalytic activities and reduction with alternative electron sources, BIOC BIOP R, 263(3), 1999, pp. 678-680
Filling-in as a within-level propagation may be an illusion
Authors: Bachmann, T
Citation: T. Bachmann, Filling-in as a within-level propagation may be an illusion, BEHAV BRAIN, 21(6), 1998, pp. 749
Risultati: 1-11 |