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Results: 1-7 |
Results: 7
Electrical properties of Pd-based ohmic contact to p-GaN
Authors: Kim, DW Bae, JC Kim, WJ Baik, HK Lee, SM
Citation: Dw. Kim et al., Electrical properties of Pd-based ohmic contact to p-GaN, J VAC SCI B, 19(3), 2001, pp. 609-614
Development of Al-free ohmic contact to n-GaN
Authors: Kim, DW Bae, JC Kim, WJ Baik, HK Kim, CY Kim, W Choi, YH Kim, CK Yoo, TK Hong, CH Lee, SM
Citation: Dw. Kim et al., Development of Al-free ohmic contact to n-GaN, J ELEC MAT, 30(7), 2001, pp. 855-860
The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment
Authors: Kim, DW Bae, JC Kim, WJ Baik, HK Myoung, JM Lee, SM
Citation: Dw. Kim et al., The improvement of electrical properties of Pd-based contact to p-GaN by surface treatment, J ELEC MAT, 30(3), 2001, pp. 183-187
Brainstem infarction following Korean viper bite
Authors: Lee, BC Hwang, SH Bae, JC Kwon, SB
Citation: Bc. Lee et al., Brainstem infarction following Korean viper bite, NEUROLOGY, 56(9), 2001, pp. 1244-1245
Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications
Authors: Yoon, DS Bae, JC Lee, SM Baik, HK
Citation: Ds. Yoon et al., Investigation of RuO2-incorporated Pt layer as a bottom electrode and diffusion barrier for high epsilon capacitor applications, EL SOLID ST, 3(8), 2000, pp. 373-376
Free vibration of coupled disk-hat structures
Authors: Bae, JC Wickert, JA
Citation: Jc. Bae et Ja. Wickert, Free vibration of coupled disk-hat structures, J SOUND VIB, 235(1), 2000, pp. 117-132
Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer
Authors: Song, YH Bae, JC Oonishi, M Honda, T Kurino, H Koyanagi, M
Citation: Yh. Song et al., Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer, ELECTR LETT, 35(5), 1999, pp. 431-433
Risultati: 1-7 |