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Results:
1-4
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Results: 4
Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65 : H alloys: A phenomenological model
Authors:
Baeri, P Malvezzi, AM Reitano, R
Citation:
P. Baeri et al., Photoluminescence yield and decay time of proton irradiated and thermally annealed a-Si0.35C0.65 : H alloys: A phenomenological model, J APPL PHYS, 90(2), 2001, pp. 682-688
Ion beam effects on the hydrogenated bonds of amorphous silicon carbide
Authors:
Musumeci, P Calcagno, L Makhtari, A Baeri, P Compagnini, G Pirri, CF
Citation:
P. Musumeci et al., Ion beam effects on the hydrogenated bonds of amorphous silicon carbide, NUCL INST B, 166, 2000, pp. 404-409
Fast melting of amorphous silicon carbide induced by nanosecond laser pulse
Authors:
Baeri, P Spinella, C Reitano, R
Citation:
P. Baeri et al., Fast melting of amorphous silicon carbide induced by nanosecond laser pulse, INT J THERM, 20(4), 1999, pp. 1211-1221
Luminescence quenching in 150 keV proton irradiated a-SiC : H
Authors:
Reitano, R Musumeci, P Baeri, P Foti, G
Citation:
R. Reitano et al., Luminescence quenching in 150 keV proton irradiated a-SiC : H, NUCL INST B, 148(1-4), 1999, pp. 578-582
Risultati:
1-4
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