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Results: 1-13 |
Results: 13
Structural transformations in low-temperature grown GaAs : Sb
Authors: Vasyukov, DA Baidakova, MV Chaldyshev, VV Suvorova, AA Preobrazhenskii, VV Putyato, MA Semyagin, BR
Citation: Da. Vasyukov et al., Structural transformations in low-temperature grown GaAs : Sb, J PHYS D, 34(10A), 2001, pp. A15-A18
Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions
Authors: Georgakilas, A Amimer, K Tzanetakis, P Hatzopoulos, Z Cengher, M Pecz, B Czigany, Z Toth, L Baidakova, MV Sakharov, AV Davydov, VY
Citation: A. Georgakilas et al., Correlation of the structural and optical properties of GaN grown on vicinal (001) GaAs substrates with the plasma-assisted MBE growth conditions, J CRYST GR, 227, 2001, pp. 410-414
Effect of C-60 fullerene, fullerene-containing soot, and other carbon materials on the sliding edge friction of metals
Authors: Ginzburg, BM Baidakova, MV Kireenko, OF Tochil'nikov, DG Shepelevskii, AA
Citation: Bm. Ginzburg et al., Effect of C-60 fullerene, fullerene-containing soot, and other carbon materials on the sliding edge friction of metals, TECH PHYS, 45(12), 2000, pp. 1595-1603
Effect of hydrogen on the structure of ultradisperse diamond
Authors: Aleksenskii, AE Baidakova, MV Vul', AY Dideikin, AT Siklitskii, VI Vul', SP
Citation: Ae. Aleksenskii et al., Effect of hydrogen on the structure of ultradisperse diamond, PHYS SOL ST, 42(8), 2000, pp. 1575-1578
Structure and defects of detonation synthesis nanodiamond
Authors: Iakoubovskii, K Baidakova, MV Wouters, BH Stesmans, A Adriaenssens, GJ Vul', AY Grobet, PJ
Citation: K. Iakoubovskii et al., Structure and defects of detonation synthesis nanodiamond, DIAM RELAT, 9(3-6), 2000, pp. 861-865
Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys
Authors: Klochikhin, AA Davydov, VY Goncharuk, IN Smirnov, AN Nikolaev, AE Baidakova, MV Aderhold, J Graul, J Stemmer, J Semchinova, O
Citation: Aa. Klochikhin et al., Statistical Ga clusters and A(1)(TO) gap mode in AlxGa1-xN alloys, PHYS REV B, 62(4), 2000, pp. 2522-2535
Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures
Authors: Sakharov, AV Lundin, VV Semenov, VA Usikov, AS Ledentsov, NN Tsatsul'nikov, AF Baidakova, MV
Citation: Av. Sakharov et al., Lasing in the vertical direction in quantum-size InGaN GaN multilayer heterostructures, TECH PHYS L, 25(6), 1999, pp. 462-465
Formation of a protective film on a copper friction surface in the presence of fullerene C-60
Authors: Ginzburg, BM Kireenko, OF Baidakova, MV Solov'ev, VA
Citation: Bm. Ginzburg et al., Formation of a protective film on a copper friction surface in the presence of fullerene C-60, TECH PHYS, 44(11), 1999, pp. 1367-1370
The structure of diamond nanoclusters
Authors: Aleksenskii, AE Baidakova, MV Vul', AY Siklitskii, VI
Citation: Ae. Aleksenskii et al., The structure of diamond nanoclusters, PHYS SOL ST, 41(4), 1999, pp. 668-671
Ultradisperse-diamond nanoclusters. Fractal structure and diamond-graphitephase transition
Authors: Baidakova, MV Siklitsky, VI Vul, AY
Citation: Mv. Baidakova et al., Ultradisperse-diamond nanoclusters. Fractal structure and diamond-graphitephase transition, CHAOS SOL F, 10(12), 1999, pp. 2153-2163
Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions
Authors: Davydov, VY Goncharuk, IN Baidakova, MV Smirnov, AN Subashiev, AV Aderhold, J Stemmer, J Rotter, T Uffmann, D Semchinova, O
Citation: Vy. Davydov et al., Raman spectroscopy of disorder effects in AlxGa1-xN solid solutions, MAT SCI E B, 59(1-3), 1999, pp. 222-225
Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsulnikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Holst, J Hoffmann, A Bimberg, D Soshnikov, IP Gerthsen, D
Citation: Av. Sakharov et al., Optical properties of structures with single and multiple InGaN insertionsin a GaN matrix, PHYS ST S-B, 216(1), 1999, pp. 435-440
Surface-mode lasing from stacked InGaN insertions in a GaN matrix
Authors: Sakharov, AV Lundin, WV Krestnikov, IL Semenov, VA Usikov, AS Tsatsul'nikov, AF Musikhin, YG Baidakova, MV Alferov, ZI Ledentsov, NN Hoffmann, A Bimberg, D
Citation: Av. Sakharov et al., Surface-mode lasing from stacked InGaN insertions in a GaN matrix, APPL PHYS L, 74(26), 1999, pp. 3921-3923
Risultati: 1-13 |