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Results: 1-20 |
Results: 20
First-principle study of C 1s core-level shifts in amorphous carbon
Authors: Haerle, R Pasquarello, A Baldereschi, A
Citation: R. Haerle et al., First-principle study of C 1s core-level shifts in amorphous carbon, COMP MAT SC, 22(1-2), 2001, pp. 67-72
Wannier functions characterization of floating bonds in a-Si
Authors: Fornari, M Marzari, N Peressi, M Baldereschi, A
Citation: M. Fornari et al., Wannier functions characterization of floating bonds in a-Si, COMP MAT SC, 20(3-4), 2001, pp. 337-342
Supramolecular self-assembly and selective step decoration on the Au(111) surface
Authors: Vladimirova, M Stengel, M De Vita, A Baldereschi, A Bohringer, M Morgenstern, K Berndt, R Schneider, WD
Citation: M. Vladimirova et al., Supramolecular self-assembly and selective step decoration on the Au(111) surface, EUROPH LETT, 56(2), 2001, pp. 254-260
Influence of surface morphology on the Si(100) and (111) ionization potentials - art. no. 195305
Authors: Sgiarovello, C Binggeli, N Baldereschi, A
Citation: C. Sgiarovello et al., Influence of surface morphology on the Si(100) and (111) ionization potentials - art. no. 195305, PHYS REV B, 6419(19), 2001, pp. 5305
Band-offset trends in nitride heterojunctions - art. no. 245306
Authors: Binggeli, N Ferrara, P Baldereschi, A
Citation: N. Binggeli et al., Band-offset trends in nitride heterojunctions - art. no. 245306, PHYS REV B, 6324(24), 2001, pp. 5306
Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307
Authors: Rubini, S Pelucchi, E Lazzarino, M Kumar, D Franciosi, A Berthod, C Binggeli, N Baldereschi, A
Citation: S. Rubini et al., Ideal unreactive metal/semiconductor interfaces: The case of Zn/ZnSe(001) - art. no. 235307, PHYS REV B, 6323(23), 2001, pp. 5307
Ab initio study of CO adsorption on Ni(110): Effects on surface magnetism at low coverage - art. no. 115416
Authors: Favot, F Dal Corso, A Baldereschi, A
Citation: F. Favot et al., Ab initio study of CO adsorption on Ni(110): Effects on surface magnetism at low coverage - art. no. 115416, PHYS REV B, 6311(11), 2001, pp. 5416
CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation
Authors: Favot, F Dal Corso, A Baldereschi, A
Citation: F. Favot et al., CO adsorbed on Cu(001): A comparison between local density approximation and Perdew, Burke, and Ernezerhof generalized gradient approximation, J CHEM PHYS, 114(1), 2001, pp. 483-488
Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations
Authors: Peressi, M Fornari, M de Gironcoli, S De Santis, L Baldereschi, A
Citation: M. Peressi et al., Coordination defects in amorphous silicon and hydrogenated amorphous silicon: a characterization from first-principles calculations, PHIL MAG B, 80(4), 2000, pp. 515-521
Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts
Authors: Bardi, J Binggeli, N Baldereschi, A
Citation: J. Bardi et al., Existence of localized interface states in metal/GaAs(100) junctions: Au versus Al contacts, PHYS REV B, 61(8), 2000, pp. 5416-5422
Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure
Authors: Fall, CJ Binggeli, N Baldereschi, A
Citation: Cj. Fall et al., Work-function anisotropy in noble metals: Contributions from d states and effects of the surface atomic structure, PHYS REV B, 61(12), 2000, pp. 8489-8495
Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs
Authors: Berthod, C Binggeli, N Baldereschi, A
Citation: C. Berthod et al., Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs, J VAC SCI B, 18(4), 2000, pp. 2114-2118
Adsorption geometry of benzene on Pd(110): Results of first-principles calculations
Authors: Favot, F Dal Corso, A Baldereschi, A
Citation: F. Favot et al., Adsorption geometry of benzene on Pd(110): Results of first-principles calculations, EUROPH LETT, 52(6), 2000, pp. 698-704
Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics
Authors: Haerle, R Baldereschi, A Galli, G
Citation: R. Haerle et al., Structural models of amorphous carbon and its surfaces by tight-binding molecular dynamics, J NON-CRYST, 266, 2000, pp. 740-745
Deriving accurate work functions from thin-slab calculations
Authors: Fall, CJ Binggeli, N Baldereschi, A
Citation: Cj. Fall et al., Deriving accurate work functions from thin-slab calculations, J PHYS-COND, 11(13), 1999, pp. 2689-2696
Floating bonds and gap states in a-Si and a-Si : H from first principles calculations
Authors: Fornari, M Peressi, M De Gironcoli, S Baldereschi, A
Citation: M. Fornari et al., Floating bonds and gap states in a-Si and a-Si : H from first principles calculations, EUROPH LETT, 47(4), 1999, pp. 481-486
Ab-initio study of the structure of Pd(110)-c(4 x 2)-benzene
Authors: Favot, F Dal Corso, A Baldereschi, A
Citation: F. Favot et al., Ab-initio study of the structure of Pd(110)-c(4 x 2)-benzene, SURF REV L, 6(5), 1999, pp. 903-906
Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions
Authors: Bardi, J Binggeli, N Baldereschi, A
Citation: J. Bardi et al., Structural and compositional dependences of the Schottky barrier in Al/Ga1-xAlxAs(100) and (110) junctions, PHYS REV B, 59(12), 1999, pp. 8054-8064
Noncubic behavior of antiferromagnetic transition-metal monoxides with therocksalt structure
Authors: Massidda, S Posternak, M Baldereschi, A Resta, R
Citation: S. Massidda et al., Noncubic behavior of antiferromagnetic transition-metal monoxides with therocksalt structure, PHYS REV L, 82(2), 1999, pp. 430-433
Structural models of amorphous carbon surfaces
Authors: Haerle, R Galli, G Baldereschi, A
Citation: R. Haerle et al., Structural models of amorphous carbon surfaces, APPL PHYS L, 75(12), 1999, pp. 1718-1720
Risultati: 1-20 |