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Results: 3
Fractional surface doping by topological neutral wall intersections on Ge(111) - art. no. 186802
Authors: Ballabio, G Goldoni, A Modesti, S Tosatti, E
Citation: G. Ballabio et al., Fractional surface doping by topological neutral wall intersections on Ge(111) - art. no. 186802, PHYS REV L, 8718(18), 2001, pp. 6802
root 3X root 3R30 degrees versus adatom-rest-atom phases on (111) semiconductor surfaces
Authors: Ballabio, G Scandolo, S Tosatti, E
Citation: G. Ballabio et al., root 3X root 3R30 degrees versus adatom-rest-atom phases on (111) semiconductor surfaces, PHYS REV B, 61(20), 2000, pp. R13345-R13348
The mechanism for the 3 x 3 distortion of Sn/Ge(111)
Authors: de Gironcoli, S Scandolo, S Ballabio, G Santoro, G Tosatti, E
Citation: S. De Gironcoli et al., The mechanism for the 3 x 3 distortion of Sn/Ge(111), SURF SCI, 454, 2000, pp. 172-177
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