Authors:
Gopalan, S
Balu, V
Lee, JH
Hee-Han, J
Lee, JC
Citation: S. Gopalan et al., Study of the electronic conduction mechanism in Nb-doped SrTiO3 thin filmswith Ir and Pt electrodes, APPL PHYS L, 77(10), 2000, pp. 1526-1528
Authors:
Chen, TS
Balu, V
Katakam, S
Lee, JH
Lee, JC
Citation: Ts. Chen et al., Effects of Ir electrodes on barium strontium titanate thin-film capacitorsfor high-density memory application, IEEE DEVICE, 46(12), 1999, pp. 2304-2310
Authors:
Gopalan, S
Wong, CH
Balu, V
Lee, JH
Han, JH
Mohammedali, R
Lee, JC
Citation: S. Gopalan et al., Effect of niobium doping on the microstructure and electrical properties of strontium titanate thin films for semiconductor memory application, APPL PHYS L, 75(14), 1999, pp. 2123-2125
Authors:
Lee, JH
Mohammedali, R
Han, JH
Balu, V
Gopalan, S
Wong, CH
Lee, JC
Citation: Jh. Lee et al., The niobium doping effects on resistance degradation of strontium titanatethin film capacitors, APPL PHYS L, 75(10), 1999, pp. 1455-1457
Authors:
Nagaraj, B
Sawhney, T
Perusse, S
Aggarwal, S
Ramesh, R
Kaushik, VS
Zafar, S
Jones, RE
Lee, JH
Balu, V
Lee, J
Citation: B. Nagaraj et al., (BaSr)TiO3 thin films with conducting perovskite electrodes for dynamic random access memory applications, APPL PHYS L, 74(21), 1999, pp. 3194-3196