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Results: 1
Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities
Authors: Perry, WL Waters, K Barela, M Anderson, HM
Citation: Wl. Perry et al., Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities, J VAC SCI A, 19(5), 2001, pp. 2272-2281
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