Authors:
Wakita, A
Rohdin, H
Robbins, V
Moll, N
Su, CY
Nagy, A
Basile, D
Citation: A. Wakita et al., Low-noise bias reliability of AlInAs/GaInAs modulation-doped field effect transistors with linearly graded low-temperature buffer layers grown on GaAs substrates, JPN J A P 1, 38(2B), 1999, pp. 1186-1189