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Results: 1-11 |
Results: 11
STM studies of 1-D noble metal growth on silicon
Authors: Baski, AA Jones, KM Saoud, KM
Citation: Aa. Baski et al., STM studies of 1-D noble metal growth on silicon, ULTRAMICROS, 86(1-2), 2001, pp. 23-30
1-D nanostructures grown on the Si(5512) surface
Authors: Baski, AA Saoud, KM Jones, KM
Citation: Aa. Baski et al., 1-D nanostructures grown on the Si(5512) surface, APPL SURF S, 182(3-4), 2001, pp. 216-222
Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction - art. no. 075311
Authors: Rinaldi, R Cingolani, R Jones, KM Baski, AA Morkoc, H Di Carlo, A Widany, J Della Sala, E Lugli, P
Citation: R. Rinaldi et al., Scanning tunneling current-voltage spectroscopy on poly(p-phenylene vinylene) films: A nanoscale probe for the electronic conduction - art. no. 075311, PHYS REV B, 6307(7), 2001, pp. 5311
Morphology and electronic structure of the Ca/Si(111) system
Authors: Baski, AA Erwin, SC Turner, MS Jones, KM Dickinson, JW Carlisle, JA
Citation: Aa. Baski et al., Morphology and electronic structure of the Ca/Si(111) system, SURF SCI, 476(1-2), 2001, pp. 22-34
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
Authors: Huang, D Visconti, P Jones, KM Reshchikov, MA Yun, F Baski, AA King, T Morkoc, H
Citation: D. Huang et al., Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy, APPL PHYS L, 78(26), 2001, pp. 4145-4147
Investigation of inversion domains in GaN by electric-force microscopy
Authors: Jones, KM Visconti, P Yun, F Baski, AA Morkoc, H
Citation: Km. Jones et al., Investigation of inversion domains in GaN by electric-force microscopy, APPL PHYS L, 78(17), 2001, pp. 2497-2499
STM and STS studies of one-dimensional row growth: Ag on Si(5512)
Authors: Jones, KM Song, HH Baski, AA
Citation: Km. Jones et al., STM and STS studies of one-dimensional row growth: Ag on Si(5512), J CLUST SCI, 10(4), 1999, pp. 573-580
Reconstructions of Ag on high-index silicon surfaces
Authors: Blankenship, SR Song, HH Baski, AA Carlisle, JA
Citation: Sr. Blankenship et al., Reconstructions of Ag on high-index silicon surfaces, J VAC SCI A, 17(4), 1999, pp. 1615-1620
Growth of Ag rows on Si(5512)
Authors: Song, HH Jones, KM Baski, AA
Citation: Hh. Song et al., Growth of Ag rows on Si(5512), J VAC SCI A, 17(4), 1999, pp. 1696-1699
The structure of Si(112): Ga-(Nx1) reconstructions
Authors: Baski, AA Erwin, SC Whitman, LJ
Citation: Aa. Baski et al., The structure of Si(112): Ga-(Nx1) reconstructions, SURF SCI, 423(2-3), 1999, pp. L265-L270
Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112)
Authors: Erwin, SC Baski, AA Whitman, LJ Rudd, RE
Citation: Sc. Erwin et al., Frenkel-Kontorova model of vacancy-line interactions on Ga/Si(112), PHYS REV L, 83(9), 1999, pp. 1818-1821
Risultati: 1-11 |