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Results: 1-8 |
Results: 8
Multiscale modeling of thin-film deposition: Applications to Si device processing
Authors: Baumann, FH Chopp, DL de la Rubia, TD Gilmer, GH Greene, JE Huang, H Kodambaka, S O'Sullivan, P Petrov, I
Citation: Fh. Baumann et al., Multiscale modeling of thin-film deposition: Applications to Si device processing, MRS BULL, 26(3), 2001, pp. 182-189
Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors
Authors: Kleiman, RN O'Malley, ML Baumann, FH Garno, JP Timp, GL
Citation: Rn. Kleiman et al., Scanning capacitance microscopy imaging of silicon metal-oxide-semiconductor field effect transistors, J VAC SCI B, 18(4), 2000, pp. 2034-2038
Simulation of physical vapor deposition into trenches and vias: Validationand comparison with experiment
Authors: O'Sullivan, PL Baumann, FH Gilmer, GH
Citation: Pl. O'Sullivan et al., Simulation of physical vapor deposition into trenches and vias: Validationand comparison with experiment, J APPL PHYS, 88(7), 2000, pp. 4061-4068
The end of the roadmap for silicon dioxide: The electronic structure of hyper-thin gate oxides at the atomic scale
Authors: Muller, DA Sorsch, T Moccio, S Baumann, FH Kawasaki, M Timp, G
Citation: Da. Muller et al., The end of the roadmap for silicon dioxide: The electronic structure of hyper-thin gate oxides at the atomic scale, SCANNING, 21(2), 1999, pp. 94-94
Effect of implant damage on the gate oxide thickness
Authors: Vuong, HH Bude, J Baumann, FH Evans-Lutterodt, K Ning, J Ma, Y Mcmacken, J Gossmann, HJ Silverman, P Rafferty, CS Hillenius, SJ
Citation: Hh. Vuong et al., Effect of implant damage on the gate oxide thickness, SOL ST ELEC, 43(5), 1999, pp. 985-988
Two-dimensional mapping of the electrostatic potential in transistors by electron holography
Authors: Rau, WD Schwander, P Baumann, FH Hoppner, W Ourmazd, A
Citation: Wd. Rau et al., Two-dimensional mapping of the electrostatic potential in transistors by electron holography, PHYS REV L, 82(12), 1999, pp. 2614-2617
The electronic structure at the atomic scale of ultrathin gate oxides
Authors: Muller, DA Sorsch, T Moccio, S Baumann, FH Evans-Lutterodt, K Timp, G
Citation: Da. Muller et al., The electronic structure at the atomic scale of ultrathin gate oxides, NATURE, 399(6738), 1999, pp. 758-761
Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy
Authors: Donnelly, VM Klemens, FP Sorsch, TW Timp, GL Baumann, FH
Citation: Vm. Donnelly et al., Oxidation of Si beneath thin SiO2 layers during exposure to HBr/O-2 plasmas, investigated by vacuum transfer x-ray photoelectron spectroscopy, APPL PHYS L, 74(9), 1999, pp. 1260-1262
Risultati: 1-8 |