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Results:
1-17
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Results: 17
Authors:
Liliental-Weber, Z
Benamara, M
Washburn, J
Domagala, JZ
Bak-Misiuk, J
Piner, EL
Roberts, JC
Bedair, SM
Citation: Z. Liliental-weber et al., Relaxation of InGaN thin layers observed by x-ray and transmission electron microscopy studies, J ELEC MAT, 30(4), 2001, pp. 439-444
Authors:
Reed, ML
Ritums, MK
Stadelmaier, HH
Reed, MJ
Parker, CA
Bedair, SM
El-Masry, NA
Citation: Ml. Reed et al., Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices, MATER LETT, 51(6), 2001, pp. 500-503
Authors:
Alexson, D
Bergman, L
Nemanich, RJ
Dutta, M
Stroscio, MA
Parker, CA
Bedair, SM
El-Masry, NA
Adar, F
Citation: D. Alexson et al., Ultraviolet raman study of A(1)(LO) and E-2 phonons in InxGa1-xN alloys, J APPL PHYS, 89(1), 2001, pp. 798-800
Authors:
Aumer, ME
LeBoeuf, SF
Moody, BF
Bedair, SM
Citation: Me. Aumer et al., Strain-induced piezoelectric field effects on light emission energy and intensity from AlInGaN/InGaN quantum wells, APPL PHYS L, 79(23), 2001, pp. 3803-3805
Authors:
Reed, ML
El-Masry, NA
Stadelmaier, HH
Ritums, MK
Reed, MJ
Parker, CA
Roberts, JC
Bedair, SM
Citation: Ml. Reed et al., Room temperature ferromagnetic properties of (Ga, Mn)N, APPL PHYS L, 79(21), 2001, pp. 3473-3475
Authors:
El-Masry, NA
Behbehani, MK
LeBoeuf, SF
Aumer, ME
Roberts, JC
Bedair, SM
Citation: Na. El-masry et al., Self-assembled AlInGaN quaternary superlattice structures, APPL PHYS L, 79(11), 2001, pp. 1616-1618
Authors:
Reed, ML
Liu, SX
Roberts, JC
Stadelmaier, HH
Bedair, SM
El-Masry, NA
Citation: Ml. Reed et al., The planar Hall effect in MnSb films and MnSb-based multilayer structures grown on (111)B GaAs, J MAGN MAGN, 218(2-3), 2000, pp. 177-181
Authors:
Liu, SX
Bedair, SM
El-Masry, NA
Citation: Sx. Liu et al., Mn-prelayer effects on the epitaxial growth of MnSb on (111)B GaAs by pulsed laser deposition, MATER LETT, 42(1-2), 2000, pp. 121-129
Authors:
Aumer, ME
LeBoeuf, SF
Bedair, SM
Smith, M
Lin, JY
Jiang, HX
Citation: Me. Aumer et al., Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures, APPL PHYS L, 77(6), 2000, pp. 821-823
Authors:
Reed, MJ
El-Masry, NA
Parker, CA
Roberts, JC
Bedair, SM
Citation: Mj. Reed et al., Critical layer thickness determination of GaN/InGaN/GaN double heterostructures, APPL PHYS L, 77(25), 2000, pp. 4121-4123
Authors:
LeBoeuf, SF
Aumer, ME
Bedair, SM
Citation: Sf. Leboeuf et al., Exploring the effects of tensile and compressive strain on two-dimensionalelectron gas properties within InGaN quantum wells, APPL PHYS L, 77(1), 2000, pp. 97-99
Authors:
Hunter, ME
Reed, MJ
El-Masry, NA
Roberts, JC
Bedair, SM
Citation: Me. Hunter et al., Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation, APPL PHYS L, 76(14), 2000, pp. 1935-1937
Authors:
Joshkin, VA
Parker, CA
Bedair, SM
Muth, JF
Shmagin, IK
Kolbas, RM
Piner, EL
Molnar, RJ
Citation: Va. Joshkin et al., Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy, J APPL PHYS, 86(1), 1999, pp. 281-288
Authors:
Aumer, ME
LeBoeuf, SF
McIntosh, FG
Bedair, SM
Citation: Me. Aumer et al., High optical quality AlInGaN by metalorganic chemical vapor deposition, APPL PHYS L, 75(21), 1999, pp. 3315-3317
Authors:
Parker, CA
Roberts, JC
Bedair, SM
Reed, MJ
Liu, SX
El-Masry, NA
Robins, LH
Citation: Ca. Parker et al., Optical band gap dependence on composition and thickness of InxGa1-xN (0 <x < 0.25) grown on GaN, APPL PHYS L, 75(17), 1999, pp. 2566-2568
Authors:
Behbehani, MK
Piner, EL
Liu, SX
El-Masry, NA
Bedair, SM
Citation: Mk. Behbehani et al., Phase separation and ordering coexisting in InxGa1-xN grown by metal organic chemical vapor deposition, APPL PHYS L, 75(15), 1999, pp. 2202-2204
Authors:
Bedair, SM
Citation: Sm. Bedair, Indium-based nitride compounds, SEM SEMIMET, 50, 1998, pp. 127-166
Risultati:
1-17
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