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Results: 1-9 |
Results: 9
High-power highly reliable Al-free 940-nm diode lasers
Authors: Erbert, G Beister, G Hulsewede, R Knauer, A Pittroff, W Sebastian, J Wenzel, H Weyers, M Trankle, G
Citation: G. Erbert et al., High-power highly reliable Al-free 940-nm diode lasers, IEEE S T QU, 7(2), 2001, pp. 143-148
High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence
Authors: Sebastian, J Beister, G Bugge, F Buhrandt, F Erbert, G Hansel, HG Hulsewede, R Knauer, A Pittroff, W Staske, R Schroder, M Wenzel, H Weyers, M Trankle, G
Citation: J. Sebastian et al., High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence, IEEE S T QU, 7(2), 2001, pp. 334-339
Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm
Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., Tensile-strained GaAsP-AlGaAs laser diodes for reliable 1,2-W continuous-wave operation at 735 nm, IEEE PHOTON, 13(1), 2001, pp. 7-9
Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 mu m large optical cavity structures
Authors: Hulsewede, R Sebastian, J Wenzel, H Beister, G Knauer, A Erbert, G
Citation: R. Hulsewede et al., Beam quality of high power 800 nm broad-area laser diodes with 1 and 2 mu m large optical cavity structures, OPT COMMUN, 192(1-2), 2001, pp. 69-75
Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes
Authors: Klehr, A Beister, G Erbert, G Klein, A Maege, J Rechenberg, I Sebastian, J Wenzel, H Trankle, G
Citation: A. Klehr et al., Defect recognition via longitudinal mode analysis of high power fundamental mode and broad area edge emitting laser diodes, J APPL PHYS, 90(1), 2001, pp. 43-47
Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence
Authors: Gramlich, S Nebauer, E Sebastian, J Beister, G
Citation: S. Gramlich et al., Damage profile of He implantation in AlGaAs laser diode material detected by photoluminescence, ELECTR LETT, 37(7), 2001, pp. 463-464
2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes
Authors: Sumpf, B Beister, G Erbert, G Fricke, J Knauer, A Pittroff, W Ressel, P Sebastian, J Wenzel, H Trankle, G
Citation: B. Sumpf et al., 2W reliable operation of lambda=735nm GaAsP/AlGaAs laser diodes, ELECTR LETT, 37(6), 2001, pp. 351-353
MOVPE growth of AlGaAs/GaInP diode lasers
Authors: Bugge, F Knauer, A Gramlich, S Rechenberg, I Beister, G Sebastian, J Wenzel, H Erbert, G Weyers, M
Citation: F. Bugge et al., MOVPE growth of AlGaAs/GaInP diode lasers, J ELEC MAT, 29(1), 2000, pp. 57-61
High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs
Authors: Beister, G Erbert, G Knauer, A Maege, J Ressel, P Sebastian, J Staske, R Wenzel, H
Citation: G. Beister et al., High-power and high temperature long-term stability of Al-free 950nm laserstructures on GaAs, ELECTR LETT, 35(19), 1999, pp. 1641-1643
Risultati: 1-9 |