Authors: Keller, S Heikman, S Ben-Yaacov, I Shen, L DenBaars, SP Mishra, UK

Citation: S. Keller et al., Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition, APPL PHYS L, 79(21), 2001, pp. 3449-3451

Authors: Cheung, R Withanage, S Reeves, RJ Brown, SA Ben-Yaacov, I Kirchner, C Kamp, M

Citation: R. Cheung et al., Reactive ion etch-induced effects on the near-band-edge luminescence in GaN, APPL PHYS L, 74(21), 1999, pp. 3185-3187