Authors: Brunner, F Richter, E Bergunde, T Rechenberg, I Bhattacharya, A Maassdorf, A Tomm, JW Kurpas, P Achouche, M Wurfl, J Weyers, M

Citation: F. Brunner et al., Effect of high-temperature annealing on GaInP/GaAs HBT structures grown byLP-MOVPE, J ELEC MAT, 29(2), 2000, pp. 205-209

Authors: Brunner, F Bergunde, T Richter, E Kurpas, P Achouche, M Maassdorf, A Wurfl, J Weyers, M

Citation: F. Brunner et al., Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor, J CRYST GR, 221, 2000, pp. 53-58

Authors: Dauelsberg, M Kadinski, L Makarov, YN Bergunde, T Strauch, G Weyers, M

Citation: M. Dauelsberg et al., Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor, J CRYST GR, 208(1-4), 2000, pp. 85-92