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Authors:
Ueda, M
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Berni, LA
Citation: M. Ueda et al., High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation, NUCL INST B, 175, 2001, pp. 715-720
Authors:
Abramof, E
Beloto, AF
Ueda, M
Gomes, GF
Berni, LA
Reuther, H
Citation: E. Abramof et al., Analysis of X-ray rocking curves in (001) silicon crystals implanted with nitrogen by plasma immersion ion implantation, NUCL INST B, 161, 2000, pp. 1054-1057
Authors:
Ueda, M
Gomes, GF
Berni, LA
Rossi, JO
Barroso, JJ
Beloto, AF
Abramof, E
Reuther, H
Citation: M. Ueda et al., Plasma immersion ion implantation using a glow discharge source with controlled plasma potential, NUCL INST B, 161, 2000, pp. 1064-1068
Authors:
Berni, LA
Ueda, M
Gomes, GF
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Reuther, H
Citation: La. Berni et al., Experimental results of a dc glow discharge source with controlled plasma floating potential for plasma immersion ion implantation, J PHYS D, 33(13), 2000, pp. 1592-1595
Authors:
Mirabella, C
Baronti, R
Berni, LA
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Masini, E
Mannaioni, PF
Citation: C. Mirabella et al., Hemin and carbon monoxide modulate the immunological response of human basophils, INT A AL IM, 118(2-4), 1999, pp. 259-260
Authors:
Beloto, AF
Abramof, E
Ueda, M
Berni, LA
Gomes, GF
Citation: Af. Beloto et al., Plasma ion implantation of nitrogen into silicon: High resolution x-ray diffraction, BRAZ J PHYS, 29(4), 1999, pp. 768-770
Authors:
Ueda, M
Berni, LA
Gomes, GF
Beloto, AF
Abramof, E
Reuther, H
Citation: M. Ueda et al., Application of a dc glow discharge source with controlled plasma potentialin plasma immersion ion implantation, J APPL PHYS, 86(9), 1999, pp. 4821-4824
Authors:
Campos, DO
Berni, LA
Machida, M
Moshkalyov, SA
Citation: Do. Campos et al., Low-angle Thomson scattering experiment for determination of plasma electron density and temperature, ASTRO SP SC, 256(1-2), 1998, pp. 437-441