Authors: Mikucki, J Baj, M Wasik, D Walukiewicz, W Bi, WG Tu, CW

Citation: J. Mikucki et al., Metastability of the phosphorus antisite defect in low-temperature InP, PHYS REV B, 61(11), 2000, pp. 7199-7202

Authors: Siwiec, J Mikucki, J Baj, M Walukiewicz, W Bi, WG Tu, CW

Citation: J. Siwiec et al., Pressure reduction of parasitic parallel conduction in InGaAs/InP heterostructures containing LT-InP layers, HIGH PR RES, 18(1-6), 2000, pp. 75-80

Authors: Yu, ET Zuo, SL Bi, WG Tu, CW Allerman, AA Biefeld, RM

Citation: Et. Yu et al., Nanometer-scale compositional variations in III-V semiconductor heterostructures characterized by scanning tunneling microscopy, J VAC SCI A, 17(4), 1999, pp. 2246-2250

Authors: Chen, WM Buyanov, AV Buyanova, IA Lundstrom, T Bi, WG Zeng, YP Tu, CW

Citation: Wm. Chen et al., Transport properties of intrinsically and extrinsically modulation doped InP/InGaAs heterostructures, PHYS SCR, T79, 1999, pp. 103-105

Authors: Buyanova, IA Chen, WM Bi, WG Zeng, YP Tu, CW

Citation: Ia. Buyanova et al., Intrinsic modulation doping in InP-based structures: properties relevant to device applications, J CRYST GR, 202, 1999, pp. 786-789

Authors: Buyanova, IA Chen, WM Bi, WG Zeng, YP Tu, CW

Citation: Ia. Buyanova et al., Thermal stability and doping efficiency of intrinsic modulation doping in InP-based structures, APPL PHYS L, 75(12), 1999, pp. 1733-1735