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Results: 1-9 |
Results: 9
Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy
Authors: Krtschil, A Witte, H Lisker, M Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D Scholz, F Off, J Stutzmann, M
Citation: A. Krtschil et al., Photoelectric properties of the 0.44 eV deep level-to-band transition in gallium nitride investigated by optical admittance spectroscopy, APPL PHYS L, 77(4), 2000, pp. 546-548
Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy
Authors: Krtschil, A Lisker, M Witte, H Christen, J Birkle, U Einfeldt, S Hommel, D
Citation: A. Krtschil et al., Characterization of optical induced defect-band-transitions in MBE grown galliumnitride by optical admittance spectroscopy, MAT SCI E B, 59(1-3), 1999, pp. 226-229
Defect complexes in highly Mg-doped GaN studied by Raman spectroscopy
Authors: Kaschner, A Kaczmarczyk, G Hoffmann, A Thomsen, C Birkle, U Einfeldt, S Hommel, D
Citation: A. Kaschner et al., Defect complexes in highly Mg-doped GaN studied by Raman spectroscopy, PHYS ST S-B, 216(1), 1999, pp. 551-555
Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaNgrown by MBE
Authors: Strauf, S Michler, P Gutowski, J Birkle, U Fehrer, M Einfeldt, S Hommel, D
Citation: S. Strauf et al., Optical spectroscopy of Mg- and C-related donor and acceptor levels in GaNgrown by MBE, PHYS ST S-B, 216(1), 1999, pp. 557-560
Incorporation of deep defects in GaN induced by doping and implantation processes
Authors: Krtschil, A Witte, H Lisker, M Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D Wenzel, A Rauschenbach, B
Citation: A. Krtschil et al., Incorporation of deep defects in GaN induced by doping and implantation processes, PHYS ST S-B, 216(1), 1999, pp. 587-591
Influence of carbon doping on the photoconductivity in GaN layers
Authors: Lisker, M Krtschil, A Witte, H Christen, J Krost, A Birkle, U Einfeldt, S Hommel, D
Citation: M. Lisker et al., Influence of carbon doping on the photoconductivity in GaN layers, PHYS ST S-B, 216(1), 1999, pp. 593-597
Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy
Authors: Kaschner, A Siegle, H Kaczmarczyk, G Strassburg, M Hoffmann, A Thomsen, C Birkle, U Einfeldt, S Hommel, D
Citation: A. Kaschner et al., Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy, APPL PHYS L, 74(22), 1999, pp. 3281-3283
Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasmasources
Authors: Krtschil, A Witte, H Lisker, M Christen, J Birkle, U Einfeldt, S Hommel, D
Citation: A. Krtschil et al., Characterization of electronic states in molecular beam epitaxy grown GaN by optical admittance spectroscopy: Comparison of different nitrogen plasmasources, APPL PHYS L, 74(14), 1999, pp. 2032-2034
Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers
Authors: Kirchner, V Heinke, H Birkle, U Einfeldt, S Hommel, D Selke, H Ryder, PL
Citation: V. Kirchner et al., Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers, PHYS REV B, 58(23), 1998, pp. 15749-15755
Risultati: 1-9 |