Authors: Bonoli, F Godio, P Borionetti, G Falster, R

Citation: F. Bonoli et al., Gate oxide integrity dependence on substrate characteristics and SiO2 thickness, MAT SC S PR, 4(1-3), 2001, pp. 145-148

Authors: Falster, R Bonoli, F Voronkov, VV

Citation: R. Falster et al., Dielectric breakdown distributions for void containing silicon substrates, MICROEL REL, 41(7), 2001, pp. 967-971