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Results:
1-8
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Results: 8
Authors:
Dlubek, G
Borner, F
Buchhold, R
Sahre, K
Krause-Rehberg, R
Eichhorn, KJ
Citation: G. Dlubek et al., Damage-depth profiling of ion-irradiated polyimide films with a variable-energy positron beam, J POL SC PP, 38(23), 2000, pp. 3062-3069
Authors:
Gebauer, J
Borner, F
Krause-Rehberg, R
Staab, TEM
Bauer-Kugelmann, W
Kogel, G
Triftshauser, W
Specht, P
Lutz, RC
Weber, ER
Luysberg, M
Citation: J. Gebauer et al., Defect identification in GaAs grown at low temperatures by positron annihilation, J APPL PHYS, 87(12), 2000, pp. 8368-8379
Authors:
Krause-Rehberg, R
Borner, F
Redmann, F
Citation: R. Krause-rehberg et al., Impurity gettering by vacancy-type defects in high-energy ion-implanted silicon at R-p/2, APPL PHYS L, 77(24), 2000, pp. 3932-3934
Authors:
Leipner, HS
Scholz, RF
Engler, N
Borner, F
Werner, P
Gosele, U
Citation: Hs. Leipner et al., Diffusivity of arsenic interstitials in GaAs studied by sulfur in-diffusion, PHYSICA B, 274, 1999, pp. 697-700
Authors:
Lutz, RC
Specht, P
Zhao, R
Lam, OH
Borner, F
Gebauer, J
Krause-Rehberg, R
Weber, ER
Citation: Rc. Lutz et al., Native point defect analysis in non-stoichiometric GaAs: an annealing study, PHYSICA B, 274, 1999, pp. 722-724
Authors:
Borner, F
Gebauer, J
Eichler, S
Krause-Rehberg, R
Dirnstorfer, I
Meyer, BK
Karg, F
Citation: F. Borner et al., Defects in CuIn(Ga)Se-2 solar cell material characterized by positron annihilation: post-growth annealing effects, PHYSICA B, 274, 1999, pp. 930-933
Authors:
Gebauer, J
Krause-Rehberg, R
Eichler, S
Borner, F
Citation: J. Gebauer et al., Doppler broadening spectroscopy using the FAST-ComTec two-dimensional coincidence system: a case study, APPL SURF S, 149(1-4), 1999, pp. 110-115
Authors:
Borner, F
Eichler, S
Polity, A
Krause-Rehberg, R
Hammer, R
Jurisch, M
Citation: F. Borner et al., Large-depth defect profiling in GaAs wafers after saw cutting, APPL SURF S, 149(1-4), 1999, pp. 151-158
Risultati:
1-8
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