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Results: 1-9 |
Results: 9
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Authors: Harris, JJ Lee, KJ Wang, T Sakai, S Bougrioua, Z Moerman, I Thrush, EJ Webb, JB Tang, H Martin, T Maude, DK Portal, JC
Citation: Jj. Harris et al., Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures, SEMIC SCI T, 16(5), 2001, pp. 402-405
Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202
Authors: Farvacque, JL Bougrioua, Z Moerman, I
Citation: Jl. Farvacque et al., Free-carrier mobility in GaN in the presence of dislocation walls - art. no. 115202, PHYS REV B, 6311(11), 2001, pp. 5202
Chemical mapping of InGaN MQWs
Authors: Sharma, N Tricker, D Thomas, P Bougrioua, Z Jacobs, K Cheyns, J Moerman, I Thrush, T Considine, L Boyd, A Humphreys, C
Citation: N. Sharma et al., Chemical mapping of InGaN MQWs, J CRYST GR, 230(3-4), 2001, pp. 438-441
Material optimisation for AlGaN/GaN HFET applications
Authors: Bougrioua, Z Moerman, I Sharma, N Wallis, RH Cheyns, J Jacobs, K Thrush, EJ Considine, L Beanland, R Farvacque, JL Humphreys, C
Citation: Z. Bougrioua et al., Material optimisation for AlGaN/GaN HFET applications, J CRYST GR, 230(3-4), 2001, pp. 573-578
Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls
Authors: Farvacaque, JL Bougrioua, Z Moerman, I
Citation: Jl. Farvacaque et al., Theoretical simulation of free carrier mobility collapse in GaN in terms of dislocation walls, J PHYS-COND, 12(49), 2000, pp. 10213-10221
Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry
Authors: Stafford, A Irvine, SJC Bougrioua, Z Jacobs, K Moerman, I Thrush, EJ Considine, L
Citation: A. Stafford et al., Quantifying the smoothing of GaN epilayer growth by in situ laser interferometry, J CRYST GR, 221, 2000, pp. 142-148
Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Farvacque, JL Bougrioua, Z Moerman, I Van Tendeloo, G Lebedev, O
Citation: Jl. Farvacque et al., Role of the defect microstructure on the electrical transport properties in undoped and Si-doped GaN grown by LP-MOVPE, PHYSICA B, 274, 1999, pp. 140-143
Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE
Authors: Bougrioua, Z Farvacque, JL Moerman, I Demeester, P Harris, JJ Lee, K van Tendeloo, G Lebedev, O Thrush, EJ
Citation: Z. Bougrioua et al., Mobility collapse in undoped and Si-doped GaN grown by LP-MOVPE, PHYS ST S-B, 216(1), 1999, pp. 571-576
Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD
Authors: Harris, JJ Lee, KJ Harrison, I Flannery, LB Korakakis, D Cheng, TS Foxon, CT Bougrioua, Z Moerman, I Van der Stricht, W Thrush, EJ Hamilton, B Ferhah, K
Citation: Jj. Harris et al., Interpretation of the temperature-dependent transport properties of GaN/sapphire films grown by MBE and MOCVD, PHYS ST S-A, 176(1), 1999, pp. 363-367
Risultati: 1-9 |