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Results: 1-10 |
Results: 10
CuGaSe2 solar cells prepared by MOVPE
Authors: Siebentritt, S Bauknecht, A Gerhard, A Fiedeler, U Kampschulte, T Schuler, S Harneit, W Brehme, S Albert, J
Citation: S. Siebentritt et al., CuGaSe2 solar cells prepared by MOVPE, SOL EN MAT, 67(1-4), 2001, pp. 129-136
Aluminium-induced crystallisation of silicon on glass for thin-film solar cells
Authors: Nast, O Brehme, S Pritchard, S Aberle, AG Wenham, SR
Citation: O. Nast et al., Aluminium-induced crystallisation of silicon on glass for thin-film solar cells, SOL EN MAT, 65(1-4), 2001, pp. 385-392
Acceptor activation energies in epitaxial CuGaSe2 grown by MOVPE
Authors: Gerhard, A Harneit, W Brehme, S Bauknecht, A Fiedeler, U Lux-Steiner, MC Siebentritt, S
Citation: A. Gerhard et al., Acceptor activation energies in epitaxial CuGaSe2 grown by MOVPE, THIN SOL FI, 387(1-2), 2001, pp. 67-70
Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition
Authors: Platen, J Selle, B Sieber, I Brehme, S Zeimer, U Fuhs, W
Citation: J. Platen et al., Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition, THIN SOL FI, 381(1), 2001, pp. 22-30
Electrical properties of Co-doped beta-FeSi2 crystals
Authors: Brehme, S Behr, G Heinrich, A
Citation: S. Brehme et al., Electrical properties of Co-doped beta-FeSi2 crystals, J APPL PHYS, 89(7), 2001, pp. 3798-3803
Electronic properties of highly P and B doped thin Si layers grown by ECR-CVD
Authors: Brehme, S Kanschat, P Lips, K Sieber, I Fuhs, W
Citation: S. Brehme et al., Electronic properties of highly P and B doped thin Si layers grown by ECR-CVD, MAT SCI E B, 69, 2000, pp. 232-237
Defects in CuGaSe2 thin films grown by MOCVD
Authors: Bauknecht, A Siebentritt, S Gerhard, A Harneit, W Brehme, S Albert, J Rushworth, S Lux-Steiner, MC
Citation: A. Bauknecht et al., Defects in CuGaSe2 thin films grown by MOCVD, THIN SOL FI, 361, 2000, pp. 426-431
Free-carrier plasma resonance effects and electron transport in reactivelysputtered degenerate ZnO : Al films
Authors: Brehme, S Fenske, F Fuhs, W Nebauer, E Poschenrieder, M Selle, B Sieber, I
Citation: S. Brehme et al., Free-carrier plasma resonance effects and electron transport in reactivelysputtered degenerate ZnO : Al films, THIN SOL FI, 342(1-2), 1999, pp. 167-173
Polycrystalline silicon thin films on glass by aluminum-induced crystallization
Authors: Nast, O Brehme, S Neuhaus, DH Wenham, SR
Citation: O. Nast et al., Polycrystalline silicon thin films on glass by aluminum-induced crystallization, IEEE DEVICE, 46(10), 1999, pp. 2062-2068
Anomalous Hall effect in beta-FeSi2
Authors: Lengsfeld, P Brehme, S Ehlers, G Lange, H Stusser, N Tomm, Y Fuhs, W
Citation: P. Lengsfeld et al., Anomalous Hall effect in beta-FeSi2, PHYS REV B, 58(24), 1998, pp. 16154-16159
Risultati: 1-10 |