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Results: 1-11 |
Results: 11
Time-resolved photoluminescence in strained GaN layers
Authors: Pozina, G Edwards, NV Bergman, JP Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved photoluminescence in strained GaN layers, PHYS ST S-A, 183(1), 2001, pp. 151-155
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
Authors: Pozina, G Edwards, NV Bergman, JP Paskova, T Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Optical characterization of wide bandgap semiconductors
Authors: Edwards, NV Bremser, MD Batchelor, AD Buyanova, IA Madsen, LD Yoo, SD Welhkamp, T Wilmers, K Cobet, C Esser, N Davis, RF Aspnes, DE Monemar, B
Citation: Nv. Edwards et al., Optical characterization of wide bandgap semiconductors, THIN SOL FI, 364(1-2), 2000, pp. 98-106
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
Authors: Hanser, AD Nam, OH Bremser, MD Thomson, DB Gehrke, T Zheleva, TS Davis, RF
Citation: Ad. Hanser et al., Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN, DIAM RELAT, 8(2-5), 1999, pp. 288-294
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
Authors: Buyanova, IA Wagner, M Chen, WM Edwards, NV Monemar, B Lindstrom, JL Bremser, MD Davis, RF Amano, H Akasaki, I
Citation: Ia. Buyanova et al., Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride, PHYS REV B, 60(3), 1999, pp. 1746-1751
Observation of highly dispersive surface states on GaN(0001)1x1
Authors: Chao, YC Stagarescu, CB Downes, JE Ryan, P Smith, KE Hanser, D Bremser, MD Davis, RF
Citation: Yc. Chao et al., Observation of highly dispersive surface states on GaN(0001)1x1, PHYS REV B, 59(24), 1999, pp. R15586-R15589
Stimulated emission in GaN thin films in the temperature range of 300-700 K
Authors: Bidnyk, S Little, BD Schmidt, TJ Cho, YH Krasinski, J Song, JJ Goldenberg, B Yang, W Perry, WG Bremser, MD Davis, RF
Citation: S. Bidnyk et al., Stimulated emission in GaN thin films in the temperature range of 300-700 K, J APPL PHYS, 85(3), 1999, pp. 1792-1795
Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999)
Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its DX-like properties in AlGaN (vol 74, pg 3833, 1999), APPL PHYS L, 75(20), 1999, pp. 3225A-3225A
Evidence for localized Si-donor state and its metastable properties in AlGaN
Authors: Skierbiszewski, C Suski, T Leszczynski, M Shin, M Skowronski, M Bremser, MD Davis, RF
Citation: C. Skierbiszewski et al., Evidence for localized Si-donor state and its metastable properties in AlGaN, APPL PHYS L, 74(25), 1999, pp. 3833-3835
Interfacial microstructure of Ni/Si-based ohmic contacts to GaN (vol 94, pg 383, 1998)
Authors: Kaminska, E Piotrowska, A Jasinski, J Kozubowski, J Barcz, A Golaszewska, K Bremser, MD Davis, RF
Citation: E. Kaminska et al., Interfacial microstructure of Ni/Si-based ohmic contacts to GaN (vol 94, pg 383, 1998), ACT PHY P A, 94(5-6), 1998, pp. 857-857
Cleaning of AlN and GaN surfaces
Authors: King, SW Barnak, JP Bremser, MD Tracy, KM Ronning, C Davis, RF Nemanich, RJ
Citation: Sw. King et al., Cleaning of AlN and GaN surfaces, J APPL PHYS, 84(9), 1998, pp. 5248-5260
Risultati: 1-11 |