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Results: 1-8 |
Results: 8
EXPERIMENTAL-EVIDENCE FOR NANOPARTICLE DEPOSITION IN CONTINUOUS ARGON-SILANE PLASMAS - EFFECTS OF SILICON NANOPARTICLES ON FILM PROPERTIES
Authors: CABARROCAS PR GAY P HADJADJ A
Citation: Pr. Cabarrocas et al., EXPERIMENTAL-EVIDENCE FOR NANOPARTICLE DEPOSITION IN CONTINUOUS ARGON-SILANE PLASMAS - EFFECTS OF SILICON NANOPARTICLES ON FILM PROPERTIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 655-659
INFLUENCE OF THE DILUTE-PHASE SIH BOND CONCENTRATION ON THE STEADY-STATE DEFECT DENSITY IN A-SI-H
Authors: GODET C MORIN P CABARROCAS PR
Citation: C. Godet et al., INFLUENCE OF THE DILUTE-PHASE SIH BOND CONCENTRATION ON THE STEADY-STATE DEFECT DENSITY IN A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 449-452
STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS
Authors: VIGNOLI S MEAUDRE R MEAUDRE M CABARROCAS PR GODET C MORIN P
Citation: S. Vignoli et al., STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS, Journal of non-crystalline solids, 200, 1996, pp. 474-477
IMPROVED MOBILITY-LIFETIME PRODUCT OF HOLES IN A-SI-H N-I-P DEVICES -A CONSEQUENCE OF STRUCTURAL RELAXATION
Authors: CUNIOT M DIXMIER J CABARROCAS PR
Citation: M. Cuniot et al., IMPROVED MOBILITY-LIFETIME PRODUCT OF HOLES IN A-SI-H N-I-P DEVICES -A CONSEQUENCE OF STRUCTURAL RELAXATION, Journal of non-crystalline solids, 200, 1996, pp. 540-543
ANALYTICAL COMPENSATION OF STRAY CAPACITANCE EFFECT IN KELVIN PROBE MEASUREMENTS
Authors: HADJADJ A CABARROCAS PR EQUER B
Citation: A. Hadjadj et al., ANALYTICAL COMPENSATION OF STRAY CAPACITANCE EFFECT IN KELVIN PROBE MEASUREMENTS, Review of scientific instruments, 66(11), 1995, pp. 5272-5276
IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/
Authors: NEITZERT HC LAYADI N CABARROCAS PR VANDERHAGHEN R
Citation: Hc. Neitzert et al., IN-SITU MICROWAVE REFLECTIVITY MEASUREMENTS OF THE CHANGES IN SURFACERECOMBINATION OF CRYSTALLINE SILICON INDUCED BY THE EXPOSURE TO SILANE, SILANE HELIUM, AND HELIUM PLASMAS/, Applied physics letters, 65(10), 1994, pp. 1260-1262
DUAL-BEAM PHOTOCURRENT SPECTRA IN UNDOPED A-SI-H - ANOMALOUS BAND, OPTICAL-TRANSITION ENERGY, AND CORRELATION-ENERGY
Authors: LIU JZ LEWEN G CONDE JP CABARROCAS PR
Citation: Jz. Liu et al., DUAL-BEAM PHOTOCURRENT SPECTRA IN UNDOPED A-SI-H - ANOMALOUS BAND, OPTICAL-TRANSITION ENERGY, AND CORRELATION-ENERGY, Journal of non-crystalline solids, 166, 1993, pp. 383-386
REAL-TIME SPECTROELLIPSOMETRY INVESTIGATION OF THE INTERACTION OF SILANE WITH A PD THIN-FILM - FORMATION OF PALLADIUM SILICIDES
Authors: YAKOVLEV V DREVILLON B LAYADI N CABARROCAS PR
Citation: V. Yakovlev et al., REAL-TIME SPECTROELLIPSOMETRY INVESTIGATION OF THE INTERACTION OF SILANE WITH A PD THIN-FILM - FORMATION OF PALLADIUM SILICIDES, Journal of applied physics, 74(4), 1993, pp. 2535-2542
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