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Authors: MOTTA N SGARLATA A CALARCO R CAL JC NGUYEN Q PROSPOSITO P BALZAROTTI A DECRESCENZI M
Citation: N. Motta et al., SCANNING-TUNNELING-MICROSCOPY STUDIES OF GE SI FILMS ON SI(111) - FROM LAYER-BY-LAYER TO QUANTUM DOTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1555-1559

Authors: MOTTA N SGARLATA A CALARCO R NGUYEN Q CAL JC PATELLA F BALZAROTTI A DECRESCENZI M
Citation: N. Motta et al., GROWTH OF GE-SI(111) EPITAXIAL LAYERS - INTERMIXING, STRAIN RELAXATION AND ISLAND FORMATION, Surface science, 406(1-3), 1998, pp. 254-263
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