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Results: 1-18 |
Results: 18
2.6 KV 4H-SIC LATERAL DMOSFETS
Authors: SPITZ J MELLOCH MR COOPER JA CAPANO MA
Citation: J. Spitz et al., 2.6 KV 4H-SIC LATERAL DMOSFETS, IEEE electron device letters, 19(4), 1998, pp. 100-102
DOPANT ACTIVATION AND SURFACE-MORPHOLOGY OF ION-IMPLANTED 4H AND 6H SILICON-CARBIDE
Authors: CAPANO MA RYU S MELLOCH MR COOPER JA BUSS MR
Citation: Ma. Capano et al., DOPANT ACTIVATION AND SURFACE-MORPHOLOGY OF ION-IMPLANTED 4H AND 6H SILICON-CARBIDE, Journal of electronic materials, 27(4), 1998, pp. 370-376
MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/
Authors: GARDNER JA EDWARDS A RAO MV PAPANICOLAOU N KELNER G HOLLAND OW CAPANO MA GHEZZO M KRETCHMER J
Citation: Ja. Gardner et al., MATERIAL AND N-P JUNCTION PROPERTIES OF N-IMPLANATED, P-IMPLANTED, AND N P-IMPLANTED SIC/, Journal of applied physics, 83(10), 1998, pp. 5118-5124
PULSED-LASER DEPOSITION OF TITANIUM-CARBONITRIDE THIN-FILMS
Authors: CAPANO MA VOEVODIN AA BULTMAN JE ZABINSKI JS
Citation: Ma. Capano et al., PULSED-LASER DEPOSITION OF TITANIUM-CARBONITRIDE THIN-FILMS, Scripta materialia, 36(10), 1997, pp. 1101-1106
SILICON-CARBIDE ELECTRONIC MATERIALS AND DEVICES
Authors: CAPANO MA TREW RJ
Citation: Ma. Capano et Rj. Trew, SILICON-CARBIDE ELECTRONIC MATERIALS AND DEVICES, MRS bulletin, 22(3), 1997, pp. 19-22
A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., A COMPARISON OF THE CRITICAL THICKNESS FOR MBE GROWN LT-GAAS DETERMINED BY IN-SITU ELLIPSOMETRY AND TRANSMISSION ELECTRON-MICROSCOPY, Journal of electronic materials, 26(4), 1997, pp. 391-396
DESIGN OF A TI TIC/DLC FUNCTIONALLY GRADIENT COATING BASED ON STUDIESOF STRUCTURAL TRANSITIONS IN TI-C THIN-FILMS/
Authors: VOEVODIN AA CAPANO MA LAUBE SJP DONLEY MS ZABINSKI JS
Citation: Aa. Voevodin et al., DESIGN OF A TI TIC/DLC FUNCTIONALLY GRADIENT COATING BASED ON STUDIESOF STRUCTURAL TRANSITIONS IN TI-C THIN-FILMS/, Thin solid films, 298(1-2), 1997, pp. 107-115
HIGH-RESISTANCE LAYERS IN N-TYPE 4H-SILICON CARBIDE BY HYDROGEN-ION IMPLANTATION
Authors: NADELLA RK CAPANO MA
Citation: Rk. Nadella et Ma. Capano, HIGH-RESISTANCE LAYERS IN N-TYPE 4H-SILICON CARBIDE BY HYDROGEN-ION IMPLANTATION, Applied physics letters, 70(7), 1997, pp. 886-888
IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY
Authors: EYINK KG CAPANO MA WALCK SD HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU AND EX-SITU SPECTROSCOPIC INVESTIGATION OF LOW-TEMPERATURE-GROWN GALLIUM-ARSENIDE BY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2278-2281
CHARACTERIZATION OF AMORPHOUS-CARBON THIN-FILMS
Authors: CAPANO MA MCDEVITT NT SINGH RK QIAN F
Citation: Ma. Capano et al., CHARACTERIZATION OF AMORPHOUS-CARBON THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(2), 1996, pp. 431-435
COMBINED MAGNETRON SPUTTERING AND PULSED-LASER DEPOSITION OF CARBIDESAND DIAMOND-LIKE CARBON-FILMS
Authors: VOEVODIN AA CAPANO MA SAFRIET AJ DONLEY MS ZABINSKI JS
Citation: Aa. Voevodin et al., COMBINED MAGNETRON SPUTTERING AND PULSED-LASER DEPOSITION OF CARBIDESAND DIAMOND-LIKE CARBON-FILMS, Applied physics letters, 69(2), 1996, pp. 188-190
MICROSTRUCTURE AND PROPERTIES OF YBA2CU3O7 THIN-FILMS GROWN ON VICINAL LAALO3 SUBSTRATES
Authors: BIGGERS RR NORTON MG MAARTENSE I PETERSON TL MOSER EK DEMPSEY D CAPANO MA TALVACCHIO J BROWN JL WOLF JD
Citation: Rr. Biggers et al., MICROSTRUCTURE AND PROPERTIES OF YBA2CU3O7 THIN-FILMS GROWN ON VICINAL LAALO3 SUBSTRATES, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 1241-1245
TIME-OF-FLIGHT ANALYSIS OF THE PLUME DYNAMICS OF LASER-ABLATED 6H-SILICON CARBIDE
Authors: CAPANO MA
Citation: Ma. Capano, TIME-OF-FLIGHT ANALYSIS OF THE PLUME DYNAMICS OF LASER-ABLATED 6H-SILICON CARBIDE, Journal of applied physics, 78(7), 1995, pp. 4790-4792
PHOTOENHANCEMENT AND PHOTOQUENCHING OF THE 0.68-EV EL2 PHOTOLUMINESCENCE EMISSION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES
Authors: YU PW CAPANO MA DAGOSTINO AT STUTZ CE
Citation: Pw. Yu et al., PHOTOENHANCEMENT AND PHOTOQUENCHING OF THE 0.68-EV EL2 PHOTOLUMINESCENCE EMISSION IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 49(23), 1994, pp. 16398-16402
MOVING PHOTOLUMINESCENCE BANDS IN GAAS1-XSBX LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES
Authors: YU PW STUTZ CE MANASREH MO KASPI R CAPANO MA
Citation: Pw. Yu et al., MOVING PHOTOLUMINESCENCE BANDS IN GAAS1-XSBX LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES, Journal of applied physics, 76(1), 1994, pp. 504-508
PULSED-LASER DEPOSITION OF SILICON-CARBIDE AT ROOM-TEMPERATURE
Authors: CAPANO MA WALCK SD MURRAY PT DEMPSEY D GRANT JT
Citation: Ma. Capano et al., PULSED-LASER DEPOSITION OF SILICON-CARBIDE AT ROOM-TEMPERATURE, Applied physics letters, 64(25), 1994, pp. 3413-3415
IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS
Authors: EYINK KG CONG YS GILBERT R CAPANO MA HAAS TW STREETMAN BG
Citation: Kg. Eyink et al., IN-SITU ELLIPSOMETRIC STUDY OF AS CAPPING AND LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GAAS GROWTH AND IMPLICATIONS FOR THE LOW-TEMPERATURE CRITICAL THICKNESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1423-1426
OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY
Authors: EYINK KG CONG YS CAPANO MA HAAS TW GILBERT RA STREETMAN BG
Citation: Kg. Eyink et al., OBSERVATION OF LOW-T GAAS GROWTH REGIMES BY REAL-TIME ELLIPSOMETRY, Journal of electronic materials, 22(12), 1993, pp. 1387-1390
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