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Results: 1-13 |
Results: 13
ADSORPTION AND DIMER EXCHANGE PROCESSES IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH OF GAAS INAS/
Authors: MIWA RH FERRAZ AC RODRIGUES WN CHACHAM H
Citation: Rh. Miwa et al., ADSORPTION AND DIMER EXCHANGE PROCESSES IN SURFACTANT-MEDIATED EPITAXIAL-GROWTH OF GAAS INAS/, Surface science, 415(1-2), 1998, pp. 20-28
BAND-GAP CLOSURE OF H-2-HE MIXTURES UNDER PRESSURE
Authors: CHACHAM H REIS SP KOILLER B
Citation: H. Chacham et al., BAND-GAP CLOSURE OF H-2-HE MIXTURES UNDER PRESSURE, The Journal of chemical physics, 109(10), 1998, pp. 4047-4051
EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS
Authors: SAFAR GAM RODRIGUES WN CURY LA CHACHAM H MOREIRA MVB FREIRE SLS DEOLIVEIRA AG
Citation: Gam. Safar et al., EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS, Applied physics letters, 71(4), 1997, pp. 521-523
TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN MOREIRA MVB RIBEIRO GM CHACHAM H
Citation: Ja. Correa et al., TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES, Solid state communications, 98(12), 1996, pp. 1063-1068
OPTICAL EFFECTS OF INTERDIFFUSION IN GAAS ALAS HETEROSTRUCTURES - ATOMIC-SCALE CALCULATIONS/
Authors: KOILLER B MARTINS AS CHACHAM H
Citation: B. Koiller et al., OPTICAL EFFECTS OF INTERDIFFUSION IN GAAS ALAS HETEROSTRUCTURES - ATOMIC-SCALE CALCULATIONS/, Applied physics letters, 69(16), 1996, pp. 2423-2425
BAND-GAP CLOSURE OF AR(H-2)(2) UNDER PRESSURE
Authors: CHACHAM H KOILLER B
Citation: H. Chacham et B. Koiller, BAND-GAP CLOSURE OF AR(H-2)(2) UNDER PRESSURE, Physical review. B, Condensed matter, 52(9), 1995, pp. 6147-6149
QUASI-PARTICLE EXCITATION-ENERGIES FOR THE F-CENTER DEFECT IN LICL
Authors: SURH MP CHACHAM H LOUIE SG
Citation: Mp. Surh et al., QUASI-PARTICLE EXCITATION-ENERGIES FOR THE F-CENTER DEFECT IN LICL, Physical review. B, Condensed matter, 51(12), 1995, pp. 7464-7470
PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER
Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CORREA JA DASILVA MIN CHACHAM H
Citation: Ag. Deoliveira et al., PHOTOCONDUCTIVITY AND N-TYPE TO P-TYPE TRANSITION IN SILICON PLANAR-DOPED GAAS STRUCTURES WITH A DOPED CAP LAYER, Journal of applied physics, 78(4), 1995, pp. 2659-2665
USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS
Authors: BEZERRA JC DEOLIVEIRA AG MAZZONI MSC CHACHAM H
Citation: Jc. Bezerra et al., USE OF THE DX CENTER AS A PROBE TO STUDY THE PROFILE OF SI IMPURITIESIN PLANAR-DOPED GAAS, Journal of applied physics, 77(7), 1995, pp. 3283-3287
NEGATIVE PHOTOCONDUCTIVITY IN SEMICONDUCTOR HETEROSTRUCTURES
Authors: CHAVES AS CHACHAM H
Citation: As. Chaves et H. Chacham, NEGATIVE PHOTOCONDUCTIVITY IN SEMICONDUCTOR HETEROSTRUCTURES, Applied physics letters, 66(6), 1995, pp. 727-729
VARIATIONAL CALCULATIONS FOR THE BOUND-UNBOUND TRANSITION OF THE YUKAWA POTENTIAL
Authors: GOMES OA CHACHAM H MOHALLEM JR
Citation: Oa. Gomes et al., VARIATIONAL CALCULATIONS FOR THE BOUND-UNBOUND TRANSITION OF THE YUKAWA POTENTIAL, Physical review. A, 50(1), 1994, pp. 228-231
COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS
Authors: DEOLIVEIRA AG RIBEIRO GM SOARES DAW CHACHAM H
Citation: Ag. Deoliveira et al., COMPETITION BETWEEN NEGATIVE AND POSITIVE PHOTOCONDUCTIVITY IN SILICON PLANAR-DOPED GAAS, Applied physics letters, 64(17), 1994, pp. 2258-2260
FAST HARTREE-FOCK CALCULATIONS BY SIMULATED DYNAMICS .2. AN EFFICIENT, STABLE, AND ACCURATE ALGORITHM FOR MOLECULES
Authors: VIANNA RO CHACHAM H MOHALLEM JR
Citation: Ro. Vianna et al., FAST HARTREE-FOCK CALCULATIONS BY SIMULATED DYNAMICS .2. AN EFFICIENT, STABLE, AND ACCURATE ALGORITHM FOR MOLECULES, The Journal of chemical physics, 98(8), 1993, pp. 6395-6400
Risultati: 1-13 |