AAAAAA

   
Results: 1-3 |
Results: 3
DEPOSITION OF HIGH-QUALITY WURTZITE GAN FILMS OVER CUBIC (111)MGAL2O4SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: SUN CJ YANG JW CHEN Q KHAN MA GEORGE T CHANGCHIEN P MAHAJAN S
Citation: Cj. Sun et al., DEPOSITION OF HIGH-QUALITY WURTZITE GAN FILMS OVER CUBIC (111)MGAL2O4SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 68(8), 1996, pp. 1129-1131
NOVEL SYMMETRY IN THE GROWTH OF GALLIUM NITRIDE ON MAGNESIUM ALUMINATE SUBSTRATES
Authors: GEORGE T JACOBSOHN E PIKE WT CHANGCHIEN P KHAN MA YANG JW MAHAJAN S
Citation: T. George et al., NOVEL SYMMETRY IN THE GROWTH OF GALLIUM NITRIDE ON MAGNESIUM ALUMINATE SUBSTRATES, Applied physics letters, 68(3), 1996, pp. 337-339
A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: GEORGE T PIKE WT KHAN MA KUZNIA JN CHANGCHIEN P
Citation: T. George et al., A MICROSTRUCTURAL COMPARISON OF THE INITIAL GROWTH OF ALN AND GAN LAYERS ON BASAL-PLANE SAPPHIRE AND SIC SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 24(4), 1995, pp. 241-247
Risultati: 1-3 |