Authors:
CHEN Y
SUEHLE JS
SHEN CC
BERNSTEIN JB
MESSICK C
CHAPARALA P
Citation: Y. Chen et al., A NEW TECHNIQUE FOR DETERMINING LONG-TERM TDDB ACCELERATION PARAMETERS OF THIN GATE OXIDES, IEEE electron device letters, 19(7), 1998, pp. 219-221
Authors:
MARTIN A
OSULLIVAN P
MATHEWSON A
SUEHLE JS
CHAPARALA P
Citation: A. Martin et al., INVESTIGATION OF THE INFLUENCE OF RAMPED VOLTAGE STRESS ON INTRINSIC T(BD) OF MOS GATE OXIDES, Solid-state electronics, 41(7), 1997, pp. 1013-1020
Citation: Js. Suehle et P. Chaparala, LOW ELECTRIC-FIELD BREAKDOWN OF THIN SIO2-FILMS UNDER STATIC AND DYNAMIC STRESS, I.E.E.E. transactions on electron devices, 44(5), 1997, pp. 801-808
Authors:
SEMANCIK S
CAVICCHI RE
KREIDER KG
SUEHLE JS
CHAPARALA P
Citation: S. Semancik et al., SELECTED-AREA DEPOSITION OF MULTIPLE ACTIVE FILMS FOR CONDUCTOMETRIC MICROSENSOR ARRAYS, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 209-212
Authors:
CAVICCHI RE
SUEHLE JS
KREIDER KG
GAITAN M
CHAPARALA P
Citation: Re. Cavicchi et al., OPTIMIZED TEMPERATURE-PULSE SEQUENCES FOR THE ENHANCEMENT OF CHEMICALLY SPECIFIC RESPONSE PATTERNS FROM MICRO-HOTPLATE GAS SENSORS, Sensors and actuators. B, Chemical, 33(1-3), 1996, pp. 142-146
Authors:
SCHLUND BJ
SUEHLE J
MESSICK C
CHAPARALA P
Citation: Bj. Schlund et al., A NEW PHYSICS-BASED MODEL FOR TIME-DEPENDENT DIELECTRIC-BREAKDOWN, Microelectronics and reliability, 36(11-12), 1996, pp. 1655-1658
Citation: Js. Suehle et P. Chaparala, CHARACTERIZATION OF TIME-DEPENDENT DIELECTRIC-BREAKDOWN IN INTRINSIC THIN SIO2, Microelectronics, 27(7), 1996, pp. 657-665
Authors:
CAVICCHI RE
SUEHLE JS
KREIDER KG
GAITAN M
CHAPARALA P
Citation: Re. Cavicchi et al., FAST TEMPERATURE-PROGRAMMED SENSING FOR MICRO-HOTPLATE GAS SENSORS, IEEE electron device letters, 16(6), 1995, pp. 286-288