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Authors:
BELMAHI M
BENEDIC F
BOUGDIRA J
CHATEI H
REMY M
ALNOT P
Citation: M. Belmahi et al., INFLUENCE OF MECHANICAL AND CHEMICAL SILICON SURFACE PREPARATION ON DIAMOND NUCLEATION AND GROWTH IN CH4 H-2 SYSTEM DISCHARGE/, Surface & coatings technology, 106(1), 1998, pp. 53-59
Authors:
BOUGDIRA J
REMY M
ALNOT P
BRUCH C
KRUGER JK
CHATEI H
DERKAOUI J
Citation: J. Bougdira et al., COMBINED EFFECT OF NITROGEN AND PULSED MICROWAVE PLASMA ON DIAMOND GROWTH USING CH4-CO2 GAS-MIXTURE, Thin solid films, 325(1-2), 1998, pp. 7-13
Authors:
CHATEI H
BOUGDIRA J
REMY M
ALNOT P
BRUCH C
KRUGER JK
Citation: H. Chatei et al., COMBINED EFFECT OF NITROGEN AND PULSED MICROWAVE PLASMA ON DIAMOND GROWTH, DIAMOND AND RELATED MATERIALS, 6(2-4), 1997, pp. 505-510
Authors:
CHATEI H
BOUGDIRA J
REMY M
ALNOT P
BRUCH C
KRUGER JK
Citation: H. Chatei et al., EFFECT OF NITROGEN CONCENTRATION ON PLASMA REACTIVITY AND DIAMOND GROWTH IN A H2CH4-N-2 MICROWAVE-DISCHARGE, DIAMOND AND RELATED MATERIALS, 6(1), 1997, pp. 107-119