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Results: 1-8 |
Results: 8
TEMPERATURE-DEPENDENCE OF QUANTIZED STATES IN AN INGAAS GAAS STRAINEDASYMMETRIC TRIANGULAR QUANTUM-WELL/
Authors: CHI WS LIN DY HUANG YS QIANG H POLLAK FH MATHINE DL MARACAS GN
Citation: Ws. Chi et al., TEMPERATURE-DEPENDENCE OF QUANTIZED STATES IN AN INGAAS GAAS STRAINEDASYMMETRIC TRIANGULAR QUANTUM-WELL/, Semiconductor science and technology, 11(3), 1996, pp. 345-351
ELECTROMODULATION SPECTROSCOPY STUDY OF SYMMETRY FORBIDDEN TRANSITIONS IN AN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL GROWN USING A TERTIARYBUTYLARSINE SOURCE/
Authors: KUAN H SU YK WU TS HUANG YS CHI WS
Citation: H. Kuan et al., ELECTROMODULATION SPECTROSCOPY STUDY OF SYMMETRY FORBIDDEN TRANSITIONS IN AN INXGA1-XAS GAAS SINGLE-QUANTUM-WELL GROWN USING A TERTIARYBUTYLARSINE SOURCE/, Solid-state electronics, 39(6), 1996, pp. 885-890
MODULATION SPECTROSCOPY STUDY OF AN INGAAS GAAS-STRAINED ASYMMETRIC TRIANGULAR QUANTUM-WELL HETEROSTRUCTURE/
Authors: HUANG YS CHI WS QIANG H POLLAK FH MATHINE DL MARACAS GN
Citation: Ys. Huang et al., MODULATION SPECTROSCOPY STUDY OF AN INGAAS GAAS-STRAINED ASYMMETRIC TRIANGULAR QUANTUM-WELL HETEROSTRUCTURE/, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 17(11-12), 1995, pp. 1499-1503
PIEZOREFLECTANCE STUDY OF A GAAS AL0.23GA0.77AS ASYMMETRIC TRIANGULARQUANTUM-WELL HETEROSTRUCTURE/
Authors: LIN FC CHI WS HUANG YS QIANG H POLLAK FH MATHINE DL MARACAS GN
Citation: Fc. Lin et al., PIEZOREFLECTANCE STUDY OF A GAAS AL0.23GA0.77AS ASYMMETRIC TRIANGULARQUANTUM-WELL HETEROSTRUCTURE/, Semiconductor science and technology, 10(7), 1995, pp. 1009-1016
THE DETERMINATION OF THE BAND OFFSETS IN STRAINED-LAYER INXGA1-XAS GAAS QUANTUM-WELLS BY LOW-TEMPERATURE MODULATION SPECTROSCOPY/
Authors: CHI WS HUANG YS
Citation: Ws. Chi et Ys. Huang, THE DETERMINATION OF THE BAND OFFSETS IN STRAINED-LAYER INXGA1-XAS GAAS QUANTUM-WELLS BY LOW-TEMPERATURE MODULATION SPECTROSCOPY/, Semiconductor science and technology, 10(2), 1995, pp. 127-137
TEMPERATURE-DEPENDENCE OF QUANTIZED STATES IN STRAINED-LAYER IN0.21GA0.79AS GAAS SINGLE-QUANTUM-WELL/
Authors: CHI WS HUANG YS QIANG H POLLAK FH PETTIT DG WOODALL JM
Citation: Ws. Chi et al., TEMPERATURE-DEPENDENCE OF QUANTIZED STATES IN STRAINED-LAYER IN0.21GA0.79AS GAAS SINGLE-QUANTUM-WELL/, JPN J A P 1, 33(2), 1994, pp. 966-970
ELECTROMODULATION SPECTROSCOPY STUDY OF A GAAS GAALAS ASYMMETRIC TRIANGULAR QUANTUM-WELL STRUCTURE/
Authors: QIANG H HUANG YS POLLAK FH CHI WS MATHINE DL MARACAS GN
Citation: H. Qiang et al., ELECTROMODULATION SPECTROSCOPY STUDY OF A GAAS GAALAS ASYMMETRIC TRIANGULAR QUANTUM-WELL STRUCTURE/, Solid-state electronics, 37(4-6), 1994, pp. 893-897
PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS
Authors: CHEN JH CHI WS HUANG YS YIN Y POLLAK FH PETTIT GD WOODALL JM
Citation: Jh. Chen et al., PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS, Semiconductor science and technology, 8(7), 1993, pp. 1420-1425
Risultati: 1-8 |