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Results: 1-9 |
Results: 9
ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES
Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T LI YX SALAMANCARIBA LG ILIADIS AA JONES KA MCGARRITY J
Citation: Rd. Vispute et al., ADVANCES IN PULSED-LASER DEPOSITION OF NITRIDES AND THEIR INTEGRATIONWITH OXIDES, Applied surface science, 129, 1998, pp. 431-439
HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES
Authors: VISPUTE RD TALYANSKY V CHOOPUN S SHARMA RP VENKATESAN T HE M TANG X HALPERN JB SPENCER MG LI YX SALAMANCARIBA LG ILIADIS AA JONES KA
Citation: Rd. Vispute et al., HETEROEPITAXY OF ZNO ON GAN AND ITS IMPLICATIONS FOR FABRICATION OF HYBRID OPTOELECTRONIC DEVICES, Applied physics letters, 73(3), 1998, pp. 348-350
GROWTH OF EPITAXIAL GAN FILMS BY PULSED-LASER DEPOSITION
Authors: VISPUTE RD TALYANSKY V SHARMA RP CHOOPUN S DOWNES M VENKATESAN T JONES KA ILIADIS AA KHAN MA YANG JW
Citation: Rd. Vispute et al., GROWTH OF EPITAXIAL GAN FILMS BY PULSED-LASER DEPOSITION, Applied physics letters, 71(1), 1997, pp. 102-104
STOICHIOMETRY AND THICKNESS VARIATION OF YBA2CU3O7-X IN PULSED-LASER DEPOSITION WITH A SHADOW MASK
Authors: TRAJANOVIC Z CHOOPUN S SHARMA RP VENKATESAN T
Citation: Z. Trajanovic et al., STOICHIOMETRY AND THICKNESS VARIATION OF YBA2CU3O7-X IN PULSED-LASER DEPOSITION WITH A SHADOW MASK, Applied physics letters, 70(25), 1997, pp. 3461-3463
ION MILLING DAMAGE AND REGROWTH OF OXIDE SUBSTRATES STUDIED BY ION CHANNELING AND ATOMIC-FORCE MICROSCOPY
Authors: TAKEUCHI I SHARMA RP CHOOPUN S LOBB CJ VENKATESAN T
Citation: I. Takeuchi et al., ION MILLING DAMAGE AND REGROWTH OF OXIDE SUBSTRATES STUDIED BY ION CHANNELING AND ATOMIC-FORCE MICROSCOPY, Applied physics letters, 70(23), 1997, pp. 3098-3100
HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES
Authors: VISPUTE RD TALYANSKY V TRAJANOVIC Z CHOOPUN S DOWNES M SHARMA RP VENKATESAN T WOODS MC LAREAU RT JONES KA ILIADIS AA
Citation: Rd. Vispute et al., HIGH-QUALITY CRYSTALLINE ZNO BUFFER LAYERS ON SAPPHIRE(001) BY PULSED-LASER DEPOSITION FOR III-V NITRIDES, Applied physics letters, 70(20), 1997, pp. 2735-2737
TEMPERATURE-DEPENDENT TUNNELING SPECTRA OF BI2SR2CACU2O8 SINGLE-CRYSTALS WITH WELL-DEFINED BI2SR2CUO6 EPITAXIAL LAYERS
Authors: MATSUMOTO T CHOOPUN S KAWAI T
Citation: T. Matsumoto et al., TEMPERATURE-DEPENDENT TUNNELING SPECTRA OF BI2SR2CACU2O8 SINGLE-CRYSTALS WITH WELL-DEFINED BI2SR2CUO6 EPITAXIAL LAYERS, Physical review. B, Condensed matter, 52(1), 1995, pp. 591-602
LOW-TEMPERATURE GROWTH OF BI4TI3O12 EPITAXIAL-FILMS ON SRTIO3(001) AND BI2SR2CACU2O8(001) SINGLE-CRYSTALS BY LASER MOLECULAR-BEAM EPITAXY
Authors: CHOOPUN S MATSUMOTO T KAWAI T
Citation: S. Choopun et al., LOW-TEMPERATURE GROWTH OF BI4TI3O12 EPITAXIAL-FILMS ON SRTIO3(001) AND BI2SR2CACU2O8(001) SINGLE-CRYSTALS BY LASER MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(8), 1995, pp. 1072-1074
EPITAXIAL-GROWTH OF BI2SR2CU1-XTIXOY THIN-FILMS ON SRTIO3 (100) AND BI2SR2CACU2O8 SINGLE-CRYSTALS FOR CONSTRUCTION OF TUNNELING BARRIER
Authors: CHOOPUN S MATSUMOTO T KAWAI T KAWAI S
Citation: S. Choopun et al., EPITAXIAL-GROWTH OF BI2SR2CU1-XTIXOY THIN-FILMS ON SRTIO3 (100) AND BI2SR2CACU2O8 SINGLE-CRYSTALS FOR CONSTRUCTION OF TUNNELING BARRIER, JPN J A P 2, 33(4B), 1994, pp. 120000587-120000589
Risultati: 1-9 |