Authors: CHA CL CHOR EF GONG H ZHANG AQ CHAN L XIE J

Citation: Cl. Cha et al., EVALUATION OF THE DIELECTRIC-BREAKDOWN OF REOXIDIZED NITRIDED-OXIDE (ONO) IN FLASH MEMORY DEVICES USING CONSTANT CURRENT-STRESSING TECHNIQUE, Microelectronics and reliability, 38(9), 1998, pp. 1439-1446

Authors: CHOR EF CHONG WK HENG CH

Citation: Ef. Chor et al., ALTERNATIVE (PD,TI,AU) CONTACTS TO (PT,TI,AU) CONTACTS FOR IN0.53GA0.47AS, Journal of applied physics, 84(5), 1998, pp. 2977-2979

Authors: LAU WS CHOR EF KEK SP AZIZ WHB LIM HC HENG CH ZHAO R

Citation: Ws. Lau et al., THE DEVELOPMENT OF A HIGHLY SELECTIVE KI I-2/H2O/H2SO4 ETCHANT FOR THE SELECTIVE ETCHING OF AL0.3GA0.7AS OVER GAAS/, JPN J A P 1, 36(6A), 1997, pp. 3770-3774

Authors: CHOR EF PENG CJ

Citation: Ef. Chor et Cj. Peng, HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN ADDITIONAL MINORITY-CARRIERREFLECTION BARRIER IN THE EMITTER, JPN J A P 1, 36(11), 1997, pp. 6694-6698

Authors: CHOR EF MALIK RJ HAMM RA RYAN R

Citation: Ef. Chor et al., METALLURGICAL STABILITY OF OHMIC CONTACTS ON THIN BASE INP INGAAS/INPHBTS/, IEEE electron device letters, 17(2), 1996, pp. 62-64

Authors: CHOR EF PENG CJ

Citation: Ef. Chor et Cj. Peng, COMPOSITE STEP-GRADED COLLECTOR OF INP INGAAS/INP DHBT FOR MINIMIZED CARRIER BLOCKING/, Electronics Letters, 32(15), 1996, pp. 1409-1410