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Results: 1-11 |
Results: 11
EXTRACTION METHOD FOR SOURCE SERIES RESISTANCE AND TRANSVERSE FIELD MOBILITY REDUCTION COEFFICIENT USING THE MOSFET SATURATION REGION
Authors: IONESCU AM CHOVET A POPESCU AE RUSU A STERIU D
Citation: Am. Ionescu et al., EXTRACTION METHOD FOR SOURCE SERIES RESISTANCE AND TRANSVERSE FIELD MOBILITY REDUCTION COEFFICIENT USING THE MOSFET SATURATION REGION, Microelectronics and reliability, 38(5), 1998, pp. 753-758
JUNCTION INFLUENCE ON DRAIN CURRENT TRANSIENTS IN PARTIALLY-DEPLETED SOI MOSFETS
Authors: IONESCU AM CHOVET A CHAUDIER F
Citation: Am. Ionescu et al., JUNCTION INFLUENCE ON DRAIN CURRENT TRANSIENTS IN PARTIALLY-DEPLETED SOI MOSFETS, Electronics Letters, 33(20), 1997, pp. 1740-1742
HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGHLY SENSITIVE IN0.75GA0.25AS ALINAS HALL SENSORS/, Semiconductor science and technology, 11(4), 1996, pp. 576-581
IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR
Authors: IONESCU AM CRISTOLOVEANU S WILSON SR RUSU A CHOVET A SEGHIR H
Citation: Am. Ionescu et al., IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 228-232
ORIGINS AND CHARACTERIZATION OF LOW-FREQUENCY NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES
Authors: CHERTOUK M CHOVET A
Citation: M. Chertouk et A. Chovet, ORIGINS AND CHARACTERIZATION OF LOW-FREQUENCY NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 123-129
HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/
Authors: DELMEDICO S BENYATTOU T GUILLOT G GENDRY M OUSTRIC M VENET T TARDY J HOLLINGER G CHOVET A MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301
A PHYSICAL ANALYSIS OF DRAIN CURRENT TRANSIENTS AT LOW DRAIN VOLTAGE IN THIN-FILM SOI MOSFETS
Authors: IONESCU AM RUSU A CHOVET A
Citation: Am. Ionescu et al., A PHYSICAL ANALYSIS OF DRAIN CURRENT TRANSIENTS AT LOW DRAIN VOLTAGE IN THIN-FILM SOI MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 431-434
ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS
Authors: VIKTOROVITCH P LOUIS P BESLAND MP CHOVET A
Citation: P. Viktorovitch et al., ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS, Solid-state electronics, 38(5), 1995, pp. 1035-1043
LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY
Authors: MOUNIB A BALESTRA F MATHIEU N BRINI J GHIBAUDO G CHOVET A CHANTRE A NOUAILHAT A
Citation: A. Mounib et al., LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1647-1652
A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/
Authors: IONESCU AM CRISTOLOVEANU S CHOVET A JARRON P HEIJNE E FACCIO F ROSSI G
Citation: Am. Ionescu et al., A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/, Microelectronic engineering, 22(1-4), 1993, pp. 391-394
INFLUENCE OF GAAS BUFFER THICKNESS ON LOW-FREQUENCY AND MICROWAVE NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES
Authors: CHERTOUK M BOUDIAF A CHOVET A AZOULAY R CLEI A
Citation: M. Chertouk et al., INFLUENCE OF GAAS BUFFER THICKNESS ON LOW-FREQUENCY AND MICROWAVE NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, Electronics Letters, 29(4), 1993, pp. 382-384
Risultati: 1-11 |