Authors:
IONESCU AM
CHOVET A
POPESCU AE
RUSU A
STERIU D
Citation: Am. Ionescu et al., EXTRACTION METHOD FOR SOURCE SERIES RESISTANCE AND TRANSVERSE FIELD MOBILITY REDUCTION COEFFICIENT USING THE MOSFET SATURATION REGION, Microelectronics and reliability, 38(5), 1998, pp. 753-758
Citation: Am. Ionescu et al., JUNCTION INFLUENCE ON DRAIN CURRENT TRANSIENTS IN PARTIALLY-DEPLETED SOI MOSFETS, Electronics Letters, 33(20), 1997, pp. 1740-1742
Authors:
IONESCU AM
CRISTOLOVEANU S
WILSON SR
RUSU A
CHOVET A
SEGHIR H
Citation: Am. Ionescu et al., IMPROVED CHARACTERIZATION OF FULLY-DEPLETED SOI WAFERS BY PSEUDO-MOS TRANSISTOR, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 228-232
Citation: M. Chertouk et A. Chovet, ORIGINS AND CHARACTERIZATION OF LOW-FREQUENCY NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, I.E.E.E. transactions on electron devices, 43(1), 1996, pp. 123-129
Authors:
DELMEDICO S
BENYATTOU T
GUILLOT G
GENDRY M
OUSTRIC M
VENET T
TARDY J
HOLLINGER G
CHOVET A
MATHIEU N
Citation: S. Delmedico et al., HIGH-SENSITIVITY HALL SENSORS USING GAINAS ALINAS PSEUDOMORPHIC HETEROSTRUCTURES/, Sensors and actuators. A, Physical, 46(1-3), 1995, pp. 298-301
Citation: Am. Ionescu et al., A PHYSICAL ANALYSIS OF DRAIN CURRENT TRANSIENTS AT LOW DRAIN VOLTAGE IN THIN-FILM SOI MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 431-434
Authors:
VIKTOROVITCH P
LOUIS P
BESLAND MP
CHOVET A
Citation: P. Viktorovitch et al., ELECTRICAL CHARACTERIZATION OF METAL-OXIDE INP TUNNEL-DIODES BASED ONCURRENT-VOLTAGE, ADMITTANCE AND LOW-FREQUENCY NOISE MEASUREMENTS, Solid-state electronics, 38(5), 1995, pp. 1035-1043
Authors:
MOUNIB A
BALESTRA F
MATHIEU N
BRINI J
GHIBAUDO G
CHOVET A
CHANTRE A
NOUAILHAT A
Citation: A. Mounib et al., LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1647-1652
Authors:
IONESCU AM
CRISTOLOVEANU S
CHOVET A
JARRON P
HEIJNE E
FACCIO F
ROSSI G
Citation: Am. Ionescu et al., A SYSTEMATIC INVESTIGATION OF RADIATION EFFECTS IN MOS SIMOX STRUCTURES/, Microelectronic engineering, 22(1-4), 1993, pp. 391-394
Authors:
CHERTOUK M
BOUDIAF A
CHOVET A
AZOULAY R
CLEI A
Citation: M. Chertouk et al., INFLUENCE OF GAAS BUFFER THICKNESS ON LOW-FREQUENCY AND MICROWAVE NOISE IN GAAS-MESFETS GROWN ON INP SUBSTRATES, Electronics Letters, 29(4), 1993, pp. 382-384