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Results: 4
INFLUENCE OF O-2(-INDUCED RIPPLE TOPOGRAPHY ON SILICON() ENERGY, FLUX, AND FLUENCE ON THE FORMATION AND GROWTH OF SPUTTERING)
Authors: VAJO JJ DOTY RE CIRLIN EH
Citation: Jj. Vajo et al., INFLUENCE OF O-2(-INDUCED RIPPLE TOPOGRAPHY ON SILICON() ENERGY, FLUX, AND FLUENCE ON THE FORMATION AND GROWTH OF SPUTTERING), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2709-2720
THEORY OF IMPROVED RESOLUTION IN-DEPTH PROFILING WITH SAMPLE ROTATION
Authors: BRADLEY RM CIRLIN EH
Citation: Rm. Bradley et Eh. Cirlin, THEORY OF IMPROVED RESOLUTION IN-DEPTH PROFILING WITH SAMPLE ROTATION, Applied physics letters, 68(26), 1996, pp. 3722-3724
LIMITING FACTORS FOR SECONDARY-ION MASS-SPECTROMETRY PROFILING
Authors: CIRLIN EH VAJO JJ HASENBERG TC
Citation: Eh. Cirlin et al., LIMITING FACTORS FOR SECONDARY-ION MASS-SPECTROMETRY PROFILING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 269-275
INTERLABORATORY COMPARISON OF THE DEPTH RESOLUTION IN SPUTTER DEPTH PROFILING OF NI CR MULTILAYERS WITH AND WITHOUT SAMPLE ROTATION USING AES, XPS AND SIMS/
Authors: HOFMANN S ZALAR A CIRLIN EH VAJO JJ MATHIEU HJ PANJAN P
Citation: S. Hofmann et al., INTERLABORATORY COMPARISON OF THE DEPTH RESOLUTION IN SPUTTER DEPTH PROFILING OF NI CR MULTILAYERS WITH AND WITHOUT SAMPLE ROTATION USING AES, XPS AND SIMS/, Surface and interface analysis, 20(8), 1993, pp. 621-626
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