Authors: LALANDE G GUELTON N COSSEMENT D SAINTJACQUES RG DODELET JP

Citation: G. Lalande et al., OPTIMUM GROWTH-CONDITIONS FOR THE EPITAXY OF GAAS ON GE BY CLOSE-SPACED VAPOR TRANSPORT, Canadian journal of physics, 72(5-6), 1994, pp. 225-232

Authors: COSSEMENT D HUANG Z PERRON G JEAN B DODELET JP

Citation: D. Cossement et al., GAAS EPITAXIAL LAYERS OBTAINED BY CLOSE-SPACED VAPOR TRANSPORT IN H2-FINE CONTROL OF THE GROWTH-RATE AND ITS EFFECT ON THE ELECTRICAL-PROPERTIES OF THE LAYERS(H2O AND H2+CO2 AMBIENTS ), Canadian journal of physics, 72(1-2), 1994, pp. 44-50

Authors: HUANG Z GUELTON N COSSEMENT D GUAY D STJACQUES RG DODELET JP

Citation: Z. Huang et al., OPTIMIZATION OF THE SURFACE-MORPHOLOGY OF GAAS EPITAXIAL LAYERS GROWNBY CLOSE-SPACED VAPOR TRANSPORT, Canadian journal of physics, 71(9-10), 1993, pp. 462-469