Authors:
HARAME DL
COMFORT JH
CRESSLER JD
CRABBE EF
SUN JYC
MEYERSON BS
TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468
Authors:
HARAME DL
COMFORT JH
CRESSLER JD
CRABBE EF
SUN JYC
MEYERSON BS
TICE T
Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482
Citation: Jd. Cressler et al., HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 117-122
Authors:
CRESSLER JD
CRABBE EF
COMFORT JH
SUN JYC
STORK JMC
Citation: Jd. Cressler et al., AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION, IEEE electron device letters, 15(11), 1994, pp. 472-474
Authors:
GAN CH
DELALAMO JA
BENNETT BR
MEYERSON BS
CRABBE EF
SODINI CG
REIF LR
Citation: Ch. Gan et al., SI SI1-XGEX VALENCE-BAND DISCONTINUITY MEASUREMENTS USING A SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) HETEROSTRUCTURE/, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2430-2439